A manufacturable 0.18-μm SiGe BiCMOS technology for 40-Gb/s optical communication LSIs

S. Wada, Y. Nonaka, T. Saito, T. Tominari, K. Koyu, K. Ikeda, K. Sakai, K. Sasahara, K. Watanabe, H. Fujiwara, F. Murata, E. Ohue, Y. Kiyota, H. Shimamoto, K. Washio, R. Takeyari, H. Hosoe, T. Hashimoto

研究成果: Paper査読

12 被引用数 (Scopus)

抄録

A highly manufacturable 0.18-μm SiGe BiCMOS technology has been developed for 40-Gb/s optical communication LSIs. A high fT / fmax of 140/183 GHz in the self-aligned SiGe HBT was achieved with highly reliable yield and device reliability. An optimized process flow and reduced thermal budgets of the SiGe HBT process made it possible to integrate a scaled CMOS without performance degradations. High performance passive elements were also integrated for a large functionality. A 16:1 MUX fabricated in this technology showed a maximum operating clock rate of 54 GHz.

本文言語English
ページ84-87
ページ数4
出版ステータスPublished - 2002
外部発表はい
イベント2002 IEEE Biopolar/BicMOS and Technology Meeting - Minneapolis, United States
継続期間: 2002 9月 292002 10月 1

Other

Other2002 IEEE Biopolar/BicMOS and Technology Meeting
国/地域United States
CityMinneapolis
Period02/9/2902/10/1

ASJC Scopus subject areas

  • 電子工学および電気工学

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