A highly manufacturable 0.18-μm SiGe BiCMOS technology has been developed for 40-Gb/s optical communication LSIs. A high fT / fmax of 140/183 GHz in the self-aligned SiGe HBT was achieved with highly reliable yield and device reliability. An optimized process flow and reduced thermal budgets of the SiGe HBT process made it possible to integrate a scaled CMOS without performance degradations. High performance passive elements were also integrated for a large functionality. A 16:1 MUX fabricated in this technology showed a maximum operating clock rate of 54 GHz.
|出版ステータス||Published - 2002|
|イベント||2002 IEEE Biopolar/BicMOS and Technology Meeting - Minneapolis, United States|
継続期間: 2002 9月 29 → 2002 10月 1
|Other||2002 IEEE Biopolar/BicMOS and Technology Meeting|
|Period||02/9/29 → 02/10/1|
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