A manufacturable 0.18-μm SiGe BiCMOS technology for 40-Gb/s optical communication LSIs

S. Wada; Y. Nonaka; T. Saito; T. Tominari; K. Koyu; K. Ikeda; K. Sakai; K. Sasahara; K. Watanabe; H. Fujiwara; F. Murata; E. Ohue; Y. Kiyota; H. Shimamoto; K. Washio; R. Takeyari; H. Hosoe; T. Hashimoto

A manufacturable 0.18-μm SiGe BiCMOS technology for 40-Gb/s optical communication LSIs

S. Wada, Y. Nonaka, T. Saito, T. Tominari, K. Koyu, K. Ikeda, K. Sakai, K. Sasahara, K. Watanabe, H. Fujiwara, F. Murata, E. Ohue, Y. Kiyota, H. Shimamoto, K. Washio, R. Takeyari, H. Hosoe, T. Hashimoto

研究成果: Paper › 査読

12 被引用数 (Scopus)

抄録

A highly manufacturable 0.18-μm SiGe BiCMOS technology has been developed for 40-Gb/s optical communication LSIs. A high f_T / f_max of 140/183 GHz in the self-aligned SiGe HBT was achieved with highly reliable yield and device reliability. An optimized process flow and reduced thermal budgets of the SiGe HBT process made it possible to integrate a scaled CMOS without performance degradations. High performance passive elements were also integrated for a large functionality. A 16:1 MUX fabricated in this technology showed a maximum operating clock rate of 54 GHz.

本文言語	English
ページ	84-87
ページ数	4
出版ステータス	Published - 2002
外部発表	はい
イベント	2002 IEEE Biopolar/BicMOS and Technology Meeting - Minneapolis, United States 継続期間: 2002 9月 29 → 2002 10月 1

Other

Other	2002 IEEE Biopolar/BicMOS and Technology Meeting
国/地域	United States
City	Minneapolis
Period	02/9/29 → 02/10/1

ASJC Scopus subject areas

電子工学および電気工学

他のファイルとリンク

引用スタイル

Wada, S., Nonaka, Y., Saito, T., Tominari, T., Koyu, K., Ikeda, K., Sakai, K., Sasahara, K., Watanabe, K., Fujiwara, H., Murata, F., Ohue, E., Kiyota, Y., Shimamoto, H., Washio, K., Takeyari, R., Hosoe, H., & Hashimoto, T. (2002). A manufacturable 0.18-μm SiGe BiCMOS technology for 40-Gb/s optical communication LSIs. 84-87. Paper presented at 2002 IEEE Biopolar/BicMOS and Technology Meeting, Minneapolis, United States.

Wada, S, Nonaka, Y, Saito, T, Tominari, T, Koyu, K, Ikeda, K, Sakai, K, Sasahara, K, Watanabe, K, Fujiwara, H, Murata, F, Ohue, E, Kiyota, Y, Shimamoto, H, Washio, K, Takeyari, R, Hosoe, H & Hashimoto, T 2002, 'A manufacturable 0.18-μm SiGe BiCMOS technology for 40-Gb/s optical communication LSIs', Paper presented at 2002 IEEE Biopolar/BicMOS and Technology Meeting, Minneapolis, United States, 02/9/29 - 02/10/1 pp. 84-87.

@conference{5e2530c1950d4624aa21991bc53fe426,

title = "A manufacturable 0.18-μm SiGe BiCMOS technology for 40-Gb/s optical communication LSIs",

abstract = "A highly manufacturable 0.18-μm SiGe BiCMOS technology has been developed for 40-Gb/s optical communication LSIs. A high fT / fmax of 140/183 GHz in the self-aligned SiGe HBT was achieved with highly reliable yield and device reliability. An optimized process flow and reduced thermal budgets of the SiGe HBT process made it possible to integrate a scaled CMOS without performance degradations. High performance passive elements were also integrated for a large functionality. A 16:1 MUX fabricated in this technology showed a maximum operating clock rate of 54 GHz.",

author = "S. Wada and Y. Nonaka and T. Saito and T. Tominari and K. Koyu and K. Ikeda and K. Sakai and K. Sasahara and K. Watanabe and H. Fujiwara and F. Murata and E. Ohue and Y. Kiyota and H. Shimamoto and K. Washio and R. Takeyari and H. Hosoe and T. Hashimoto",

year = "2002",

language = "English",

pages = "84--87",

note = "2002 IEEE Biopolar/BicMOS and Technology Meeting ; Conference date: 29-09-2002 Through 01-10-2002",

}

TY - CONF

T1 - A manufacturable 0.18-μm SiGe BiCMOS technology for 40-Gb/s optical communication LSIs

AU - Wada, S.

AU - Nonaka, Y.

AU - Saito, T.

AU - Tominari, T.

AU - Koyu, K.

AU - Ikeda, K.

AU - Sakai, K.

AU - Sasahara, K.

AU - Watanabe, K.

AU - Fujiwara, H.

AU - Murata, F.

AU - Ohue, E.

AU - Kiyota, Y.

AU - Shimamoto, H.

AU - Washio, K.

AU - Takeyari, R.

AU - Hosoe, H.

AU - Hashimoto, T.

PY - 2002

Y1 - 2002

N2 - A highly manufacturable 0.18-μm SiGe BiCMOS technology has been developed for 40-Gb/s optical communication LSIs. A high fT / fmax of 140/183 GHz in the self-aligned SiGe HBT was achieved with highly reliable yield and device reliability. An optimized process flow and reduced thermal budgets of the SiGe HBT process made it possible to integrate a scaled CMOS without performance degradations. High performance passive elements were also integrated for a large functionality. A 16:1 MUX fabricated in this technology showed a maximum operating clock rate of 54 GHz.

AB - A highly manufacturable 0.18-μm SiGe BiCMOS technology has been developed for 40-Gb/s optical communication LSIs. A high fT / fmax of 140/183 GHz in the self-aligned SiGe HBT was achieved with highly reliable yield and device reliability. An optimized process flow and reduced thermal budgets of the SiGe HBT process made it possible to integrate a scaled CMOS without performance degradations. High performance passive elements were also integrated for a large functionality. A 16:1 MUX fabricated in this technology showed a maximum operating clock rate of 54 GHz.

UR - http://www.scopus.com/inward/record.url?scp=0036437766&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036437766&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0036437766

SP - 84

EP - 87

T2 - 2002 IEEE Biopolar/BicMOS and Technology Meeting

Y2 - 29 September 2002 through 1 October 2002

ER -

A manufacturable 0.18-μm SiGe BiCMOS technology for 40-Gb/s optical communication LSIs

抄録

Other

ASJC Scopus subject areas

他のファイルとリンク

フィンガープリント

引用スタイル