TY - JOUR
T1 - A low threshold current density InAs/AlGaSb superlattice quantum cascade laser operating at 14 μm
AU - Ohtani, Keita
AU - Fujita, Kazuue
AU - Ohno, Hideo
PY - 2004/7/1
Y1 - 2004/7/1
N2 - We report a low threshold current density InAs/AlGaSb superlattice quantum cascade laser operating at 14 μm. In order to reduce the threshold current density, InAs/AlGaSb superlattice structures providing large oscillator strength and fast carrier depopulation are used for the active layers. Observed threshold current density at 80 K is 0.92kA/cm2, which is about 5 times lower than that of the first InAs/AlSb quantum cascade laser reported earlier. This is among lowest threshold current density of quantum cascade lasers operating in the mid-infrared spectrum region.
AB - We report a low threshold current density InAs/AlGaSb superlattice quantum cascade laser operating at 14 μm. In order to reduce the threshold current density, InAs/AlGaSb superlattice structures providing large oscillator strength and fast carrier depopulation are used for the active layers. Observed threshold current density at 80 K is 0.92kA/cm2, which is about 5 times lower than that of the first InAs/AlSb quantum cascade laser reported earlier. This is among lowest threshold current density of quantum cascade lasers operating in the mid-infrared spectrum region.
KW - AlGaSb
KW - InAs
KW - Molecular beam epitaxy
KW - Quantum cascade laser
KW - Superlattice
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U2 - 10.1143/JJAP.43.L879
DO - 10.1143/JJAP.43.L879
M3 - Article
AN - SCOPUS:4444350362
VL - 43
SP - L879-L881
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 7 A
ER -