A high-resolution electron microscopy study of vanadium deposited on the basal plane of sapphire

Y. Ikuhara, P. Pirouz

    研究成果: Article査読

    20 被引用数 (Scopus)

    抄録

    The interface between vanadium and the basal plane of sapphire was studied by conventional and cross sectional high resolution electron microscopy (HREM) to clarify the atomic structure of the interface. A 50 nm thick vanadium film was deposited on the (0001) basal plane of sapphire by molecular beam epitaxy (MBE). The TEM observations of the interface were made from three directions: two cross-sectional views (parallel to [1210]Al2O3 and [1010]Al2O3) and plan view (parallel to [0001]Al2O3). From the SADP, the following orientation relationship was obtained: (111)V {norm of matrix}(0001)Al2O3; [101V {norm of matrix}[1210]Al2O3. Cross-sectional HREM observations showed the atomic configuration at the interface, and the existence of periodic arrays of geometrical misfit dislocations. Computer simulations show that sapphire is aluminum-terminated at the interface with vanadium.

    本文言語English
    ページ(範囲)421-428
    ページ数8
    ジャーナルUltramicroscopy
    52
    3-4
    DOI
    出版ステータスPublished - 1993 12

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics
    • Instrumentation

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