抄録
The interface between vanadium and the basal plane of sapphire was studied by conventional and cross sectional high resolution electron microscopy (HREM) to clarify the atomic structure of the interface. A 50 nm thick vanadium film was deposited on the (0001) basal plane of sapphire by molecular beam epitaxy (MBE). The TEM observations of the interface were made from three directions: two cross-sectional views (parallel to [1210]Al2O3 and [1010]Al2O3) and plan view (parallel to [0001]Al2O3). From the SADP, the following orientation relationship was obtained: (111)V {norm of matrix}(0001)Al2O3; [101V {norm of matrix}[1210]Al2O3. Cross-sectional HREM observations showed the atomic configuration at the interface, and the existence of periodic arrays of geometrical misfit dislocations. Computer simulations show that sapphire is aluminum-terminated at the interface with vanadium.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 421-428 |
| ページ数 | 8 |
| ジャーナル | Ultramicroscopy |
| 巻 | 52 |
| 号 | 3-4 |
| DOI | |
| 出版ステータス | Published - 1993 12 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Instrumentation