We developed an accuracy improved resistance measurement platform for statistical evaluation of emerging memory materials. The developed platform excludes on-resistance of selectors (R ON), resulting in high measurement accuracy with a measurement error of 10% or less across the measurement range of 1 Ω-10 MΩ. The developed platform can accurately measure the resistance of various memory materials on a large scale of 360 000 cells within 50 ms. Various memory materials can be tested only by forming them on top of the platform. The circuit operation was verified, and the effect of R ON exclusion was confirmed using 6000 Poly-Si cells.
ASJC Scopus subject areas
- Physics and Astronomy(all)