A divalent rare earth oxide semiconductor: Yttrium monoxide

Kenichi Kaminaga, Ryosuke Sei, Kouichi Hayashi, Naohisa Happo, Hiroo Tajiri, Daichi Oka, Tomoteru Fukumura, Tetsuya Hasegawa

研究成果: Article査読

18 被引用数 (Scopus)

抄録

Rare earth oxides are usually widegap insulators like Y2O3 with closed shell trivalent rare earth ions. In this study, solid phase rock salt structure yttrium monoxide, YO, with unusual valence of Y2+ (4d1) was synthesized in a form of epitaxial thin film by pulsed laser deposition method. YO has been recognized as gaseous phase in previous studies. In contrast with Y2O3, YO was dark-brown colored and narrow gap semiconductor. The tunable electrical conductivity ranging from 10-1 to 103 Ω-1cm-1 was attributed to the presence of oxygen vacancies serving as electron donor. Weak antilocalization behavior observed in magnetoresistance indicated significant role of spin-orbit coupling as a manifestation of 4d electron carrier.

本文言語English
論文番号122102
ジャーナルApplied Physics Letters
108
12
DOI
出版ステータスPublished - 2016 3 21

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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