A disturbance-free read scheme and a compact stochastic-spin-dynamics-based MTJ circuit model for Gb-scale SPRAM

K. Ono, T. Kawahara, R. Takemura, K. Miura, H. Yamamoto, M. Yamanouchi, J. Hayakawa, K. Ito, H. Takahashi, S. Ikeda, H. Hasegawa, H. Matsuoka, H. Ohno

研究成果: Conference contribution

35 被引用数 (Scopus)

抄録

A magnetic-tunnel-junction (MTJ) circuit model, which considers spin dynamics under finite temperature, electrical bias, a stochastic process, and spin-transfer torque, was developed. Switching behaviors simulated by this model were verified by experimental measurements. Moreover, a disturbance-free read scheme for Gbit-scale spin-transfer torque RAM (SPRAM) was also developed. The feasibility of this scheme was confirmed by circuit simulation using the model and on-chip measurement of switching probability.

本文言語English
ホスト出版物のタイトル2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
ページ9.3.1-9.3.4
DOI
出版ステータスPublished - 2009
イベント2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States
継続期間: 2009 12 72009 12 9

出版物シリーズ

名前Technical Digest - International Electron Devices Meeting, IEDM
ISSN(印刷版)0163-1918

Other

Other2009 International Electron Devices Meeting, IEDM 2009
国/地域United States
CityBaltimore, MD
Period09/12/709/12/9

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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