A distributed selector IC using GaAs MESFET's with multilayer-interconnection structure

Koichi Murata, Taiichi Otsuji, Yuhki Ima, Suehiro Sugitani

研究成果: Article査読

4 被引用数 (Scopus)

抄録

This paper describes novel high-speed selector circuits based on the distributed circuit approach and their circuit design methodologies. Two types of distributed selectors are designed and fabricated using 0.16-• m GaAs MESFET's with multilayer-interconnection structure. Both basically consist of eight stages of series-gated source-coupled field-effect transistor (FET) logic (SCFL) selector cell units laid out in a distributed fashion. The second circuit incorporates additional functions: a data input level shifter in each cell to make an SCFL interface for the data input and a balun for single-balance transformation of the clock input. A small-signal distributed amplifier design is extended to a large-signal distributed logic IC design, taking dynamic variations in transistor parameters into consideration. The error-free operation of both fabricated distributed selector IC's is confirmed at up to 40 Gbit/s, and the first IC still exhibited eye opening with 130-mV voltage swing of the inside measurement at 70 Gbit/s, which reaches 80% of f T of the fabricated FET. These distributed selector IC's successfully exhibit eye opening at higher bit rates compared to the conventional lumped-element design selector.

本文言語English
ページ(範囲)258-267
ページ数10
ジャーナルIEEE Journal of Solid-State Circuits
35
2
DOI
出版ステータスPublished - 2000 2 1
外部発表はい

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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