A design of a Capacitorless 1T-DRAM Cell Using Gate-induced Drain Leakage (GIDL) Current for Low-power and High-speed Embedded Memory

Eiji Yoshida, Tetsu Tanaka

研究成果: Conference article査読

23 被引用数 (Scopus)

抄録

A capacitorless 1T-DRAM cell using gate-induced drain leakage (GIDL) current for write operation was demonstrated for the first time. Compared with the conventional write operation with impact ionization current, write operation with GIDL current provides low-power and high-speed operation. The capacitorless 1T-DRAM is the most promising technology for high performance embedded DRAM LSI.

本文言語English
ページ(範囲)913-916
ページ数4
ジャーナルTechnical Digest - International Electron Devices Meeting
出版ステータスPublished - 2003
外部発表はい
イベントIEEE International Electron Devices Meeting - Washington, DC, United States
継続期間: 2003 12月 82003 12月 10

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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