A design of a Capacitorless 1T-DRAM Cell Using Gate-induced Drain Leakage (GIDL) Current for Low-power and High-speed Embedded Memory

Eiji Yoshida; Tetsu Tanaka

A design of a Capacitorless 1T-DRAM Cell Using Gate-induced Drain Leakage (GIDL) Current for Low-power and High-speed Embedded Memory

研究成果: Conference article › 査読

抄録

A capacitorless 1T-DRAM cell using gate-induced drain leakage (GIDL) current for write operation was demonstrated for the first time. Compared with the conventional write operation with impact ionization current, write operation with GIDL current provides low-power and high-speed operation. The capacitorless 1T-DRAM is the most promising technology for high performance embedded DRAM LSI.

本文言語	English
ページ（範囲）	913-916
ページ数	4
ジャーナル	Technical Digest - International Electron Devices Meeting
出版ステータス	Published - 2003
外部発表	はい
イベント	IEEE International Electron Devices Meeting - Washington, DC, United States 継続期間: 2003 12月 8 → 2003 12月 10

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学
電子工学および電気工学
材料化学

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引用スタイル

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abstract = "A capacitorless 1T-DRAM cell using gate-induced drain leakage (GIDL) current for write operation was demonstrated for the first time. Compared with the conventional write operation with impact ionization current, write operation with GIDL current provides low-power and high-speed operation. The capacitorless 1T-DRAM is the most promising technology for high performance embedded DRAM LSI.",

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journal = "Technical Digest - International Electron Devices Meeting",

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AU - Yoshida, Eiji

AU - Tanaka, Tetsu

PY - 2003

Y1 - 2003

N2 - A capacitorless 1T-DRAM cell using gate-induced drain leakage (GIDL) current for write operation was demonstrated for the first time. Compared with the conventional write operation with impact ionization current, write operation with GIDL current provides low-power and high-speed operation. The capacitorless 1T-DRAM is the most promising technology for high performance embedded DRAM LSI.

AB - A capacitorless 1T-DRAM cell using gate-induced drain leakage (GIDL) current for write operation was demonstrated for the first time. Compared with the conventional write operation with impact ionization current, write operation with GIDL current provides low-power and high-speed operation. The capacitorless 1T-DRAM is the most promising technology for high performance embedded DRAM LSI.

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M3 - Conference article

AN - SCOPUS:0842266492

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JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

T2 - IEEE International Electron Devices Meeting

Y2 - 8 December 2003 through 10 December 2003

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