抄録
A capacitorless 1T-DRAM cell using gate-induced drain leakage (GIDL) current for write operation was demonstrated for the first time. Compared with the conventional write operation with impact ionization current, write operation with GIDL current provides low-power and high-speed operation. The capacitorless 1T-DRAM is the most promising technology for high performance embedded DRAM LSI.
本文言語 | English |
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ページ(範囲) | 913-916 |
ページ数 | 4 |
ジャーナル | Technical Digest - International Electron Devices Meeting |
出版ステータス | Published - 2003 |
イベント | IEEE International Electron Devices Meeting - Washington, DC, United States 継続期間: 2003 12 8 → 2003 12 10 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry