A content addressable memory using magnetic domain wall motion cells

R. Nebashi, N. Sakimura, Y. Tsuji, S. Fukami, H. Honjo, S. Saito, S. Miura, N. Ishiwata, K. Kinoshita, T. Hanyu, T. Endoh, N. Kasai, H. Ohno, T. Sugibayashi

研究成果: Conference contribution

30 被引用数 (Scopus)

抄録

A 5-ns search operation of a spintronic content addressable memory (Spin-CAM) was demonstrated, and the speed was the fastest to date. The CAM macro, with a capacity of 16 kb, was fabricated using 90-nm CMOS and domain wall (DW) motion processes. The operating speed was comparable to that of SRAM-based CAM. We also propose a CAM which has multiple contexts by improving the CAM cell circuit to enhance the SoC's performance. The estimated cell area is 3.5 μm2, which is less than that of an SRAM-based CAM cell, when a four-context CAM is designed.

本文言語English
ホスト出版物のタイトル2011 Symposium on VLSI Circuits, VLSIC 2011 - Digest of Technical Papers
ページ300-301
ページ数2
出版ステータスPublished - 2011 9 16
イベント2011 Symposium on VLSI Circuits, VLSIC 2011 - Kyoto, Japan
継続期間: 2011 6 152011 6 17

出版物シリーズ

名前IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Other

Other2011 Symposium on VLSI Circuits, VLSIC 2011
CountryJapan
CityKyoto
Period11/6/1511/6/17

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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