A computer analysis of effects of annealing on Inp insulator-semiconductor interface properties using mis c-v curves

Li He, Hideki Hasegawa, Takayuki Sawada, Hideo Ohno

研究成果: Article査読

26 被引用数 (Scopus)

抄録

The effects of annealing on the distributions of interface states at the I-S interface were investigated by analyzing the C-V characteristics of as-grown and annealed Al2O3native oxide/InP MIS capacitors using a self-consistent computer simulation program. It is shown that interface states form a continuum of donor-like and acceptor-like states continuously distributed both in energy and in space. The state density distribution before and after annealing maintains the same functional form, which is U-shaped in energy and exponentially decaying in space.The charge neutrality point dividing donor-like and acceptor-like states occurs at the U-shaped minimum.Annealing reduces the spatial extension of states, the U-shape curvature and the magnitude of density.However, the energy position of the charge neutrality point remains remarkably invariant.

本文言語English
ページ(範囲)512-521
ページ数10
ジャーナルJapanese journal of applied physics
27
4R
DOI
出版ステータスPublished - 1988 4
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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