A comparison study: Direct wafer bonding of SiC-SiC by standard surface-activated bonding and modified surface-activated bonding with Si-containing Ar ion beam

Fengwen Mu, Kenichi Iguchi, Haruo Nakazawa, Yoshikazu Takahashi, Masahisa Fujino, Ran He, Tadatomo Suga

研究成果: Article査読

28 被引用数 (Scopus)

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Engineering & Materials Science

Physics & Astronomy