A comparison study: Direct wafer bonding of SiC-SiC by standard surface-activated bonding and modified surface-activated bonding with Si-containing Ar ion beam

Fengwen Mu, Kenichi Iguchi, Haruo Nakazawa, Yoshikazu Takahashi, Masahisa Fujino, Ran He, Tadatomo Suga

研究成果: Article査読

28 被引用数 (Scopus)

抄録

In this study, the results of direct wafer bonding of SiC-SiC at room temperature by standard surface-activated bonding (SAB) and modified SAB with a Si-containing Ar ion beam were compared, in terms of bonding energy, interface structure and composition, and the effects of rapid thermal annealing (RTA) at 1273K in Ar gas. Compared with that obtained by the standard SAB, the bonding interface obtained by the modified SAB with a Si-containing Ar ion beam is >30% stronger and almost completely recrystallized without oxidation during RTA, which should be due to the in situ Si compensation during surface activation by the Si-containing Ar ion beam.

本文言語English
論文番号081302
ジャーナルApplied Physics Express
9
8
DOI
出版ステータスPublished - 2016 8
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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