@inproceedings{8d89c0b3e1df4676be45eea427928870,
title = "A combinatorial study of metal gate/HfO2 MOSCAPS",
abstract = "Combinatorial methodology is a rapid technique for surveying new gate dielectrics and gate metal electrodes for the very complex advanced CMOS gate stack. Here, we report on a typical metal gate electrode alloy system, the Ni-Ti-Pt ternary. We have fabricated this metal gate thin film library on HfO2 using magnetron co-sputtering, to investigate flat-band voltage shift (ΔVfb) and leakage current density (JL) variations. Wavelength dispersive spectroscopy (WDS) results show that compositions containing up to 90% of Ni and Ti, and 75% of Pt were attained in the library. A more negative ΔVfb is observed close to the Ti-rich corner than close to the Ni- and Pt-rich corners, implying smaller work function (Φm) near the Ti-rich corners and higher Φm near Ni- and Pt-rich corners. Measured JL values are consistent with the observed ΔVfb variations. copyright The Electrochemical Society.",
author = "Green, {M. L.} and Chang, {K. S.} and I. Takeuchi and T. Chikyow",
year = "2006",
doi = "10.1149/1.2355725",
language = "English",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "3",
pages = "341--350",
booktitle = "Physics and Technology of High-k Gate Dielectrics 4",
edition = "3",
note = "Physics and Technology of High-k Gate Dielectrics 4 - 210th Electrochemical Society Meeting ; Conference date: 29-10-2006 Through 03-11-2006",
}