TY - GEN
T1 - A CMOS compatible low temperature process for photonic crystal MEMS scanner
AU - Takahashi, K.
AU - Jung, I. W.
AU - Higo, A.
AU - Mita, Y.
AU - Fujita, H.
AU - Toshiyoshi, H.
AU - Solgaard, O.
PY - 2009/12/16
Y1 - 2009/12/16
N2 - We report a CMOS-compatible low-temperature process for electrostatic MEMS scanner with highly reflective photonic crystal mirror in the near IR region. The photonic crystal was made in the EB-evaporated amorphous silicon layer deposited on the MEMS scanner. The reflectivity was found over 90 % at 1.55 μm wavelength. Mechanical angle displacement of 6 degree was obtained with an applied voltage of 25 Vpp at the resonance frequency of 3.36 kHz.
AB - We report a CMOS-compatible low-temperature process for electrostatic MEMS scanner with highly reflective photonic crystal mirror in the near IR region. The photonic crystal was made in the EB-evaporated amorphous silicon layer deposited on the MEMS scanner. The reflectivity was found over 90 % at 1.55 μm wavelength. Mechanical angle displacement of 6 degree was obtained with an applied voltage of 25 Vpp at the resonance frequency of 3.36 kHz.
KW - CMOS compatible process
KW - MEMS electrostatic scanner
KW - Photonic Crystal
UR - http://www.scopus.com/inward/record.url?scp=71749090900&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=71749090900&partnerID=8YFLogxK
U2 - 10.1109/OMEMS.2009.5338587
DO - 10.1109/OMEMS.2009.5338587
M3 - Conference contribution
AN - SCOPUS:71749090900
SN - 9781424423828
T3 - 2009 IEEE/LEOS International Conference on Optical MEMS and Nanophotonics, OPTMEMS 2009
SP - 77
EP - 78
BT - 2009 IEEE/LEOS International Conference on Optical MEMS and Nanophotonics, OPTMEMS 2009
T2 - 2009 IEEE/LEOS International Conference on Optical MEMS and Nanophotonics, OPTMEMS 2009
Y2 - 17 August 2009 through 20 August 2009
ER -