A 24.3Me - Full Well Capacity CMOS Image Sensor with Lateral Overflow Integration Trench Capacitor for High Precision Near Infrared Absorption Imaging

M. Murata, R. Kuroda, Y. Fujihara, Y. Aoyagi, H. Shibata, T. Shibaguchi, Y. Kamata, N. Miura, N. Kuriyama, S. Sugawa

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

This paper presents a 16μm pixel pitch CMOS image sensor exhibiting 24.3Me-full well capacity with a record spatial efficiency of 95 ke-μm2 and high quantum efficiency in near infrared waveband by the introduction of lateral overflow integration trench capacitor on a∼ 10 12 cm -3 p-type Si substrate. A diffusion of 5mg/dl concentration glucose was clearly visualized by an over 71 dB SNR absorption imaging at 1050nm.

本文言語English
ホスト出版物のタイトル2018 IEEE International Electron Devices Meeting, IEDM 2018
出版社Institute of Electrical and Electronics Engineers Inc.
ページ10.3.1-10.3.4
ISBN(電子版)9781728119878
DOI
出版ステータスPublished - 2019 1月 16
イベント64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, United States
継続期間: 2018 12月 12018 12月 5

出版物シリーズ

名前Technical Digest - International Electron Devices Meeting, IEDM
2018-December
ISSN(印刷版)0163-1918

Conference

Conference64th Annual IEEE International Electron Devices Meeting, IEDM 2018
国/地域United States
CitySan Francisco
Period18/12/118/12/5

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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