A 1.9 e- random noise CMOS image sensor with active feedback operation in each pixel

Woonghee Lee, Nana Akahane, Satoru Adachi, Koichi Mizobuchi, Shigetoshi Sugawa

研究成果: Article査読

9 被引用数 (Scopus)

抄録

A 1.9 e- random noise CMOS image sensor has been developed by applying an active feedback operation (AFO), which uses a capacitive feedback effect to floating diffusion (FD) by a gate-source capacitance of a pixel source follower (SF), in a CMOS image sensor with a lateral overflow integration capacitor (LOFIC) technology. It is described that the AFO is suitable for CMOS image sensors with LOFIC because the design of the full well capacity and the FD can be independently optimized. The AFO theory is found to be explored to a large signal voltage in detail, as well as the conventional analysis of the capacitive feedback effect of the pixel SF for a small signal voltage. A 1/4-in 5.6-μm-pitch 640(H) × 480(V) pixel sensor chip in a 0.18-μm two-poly-Si three-metal CMOS technology achieves about 1.7 times the sensitivity with AFO compared with the case where the feedback operation is not positively used, resulting in an input-referred conversion gain of 210 μV/e- and an input-referred noise of 1.9 e-. A high well capacity of 130000 e- is also achieved.

本文言語English
ページ(範囲)2436-2445
ページ数10
ジャーナルIEEE Transactions on Electron Devices
56
11
DOI
出版ステータスPublished - 2009 11 10

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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