A 128kb FeRAM macro for a contact/contactless smart card microcontroller

J. Yamada, T. Miwa, H. Koike, H. Toyoshima, K. Amanuma, S. Kobayashi, T. Tatsumi, Y. Maejima, H. Hada, H. Mori, S. Takahashi, H. Takeuchi, T. Kunio

研究成果: Conference article査読

11 被引用数 (Scopus)

抄録

A 128kb ferroelectric memory macro for a contact/contactless smart card microcontroller was studied. The macro uses 3-metal process capacitor-on-metal/via-stacked-plug (CMVP) memory cell, voltage regulation architecture, main/sub bit line and word line structure and dynamic-type offset sense amplifier. The memory cell array featuring low current consumption and memory size flexibility was produced using 3-metal wiring. The offset sense amplifier was used to improve ferroelectric memory reliability.

本文言語English
ページ(範囲)270-271
ページ数2
ジャーナルDigest of Technical Papers - IEEE International Solid-State Circuits Conference
出版ステータスPublished - 2000 12 1
外部発表はい
イベント2000 IEEE International Solid-State Circuits Conference 47th Annual ISSCC - San Francisco, CA, United States
継続期間: 2000 2 72000 2 9

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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