A 128kb ferroelectric memory macro for a contact/contactless smart card microcontroller was studied. The macro uses 3-metal process capacitor-on-metal/via-stacked-plug (CMVP) memory cell, voltage regulation architecture, main/sub bit line and word line structure and dynamic-type offset sense amplifier. The memory cell array featuring low current consumption and memory size flexibility was produced using 3-metal wiring. The offset sense amplifier was used to improve ferroelectric memory reliability.
|ジャーナル||Digest of Technical Papers - IEEE International Solid-State Circuits Conference|
|出版ステータス||Published - 2000 12 1|
|イベント||2000 IEEE International Solid-State Circuits Conference 47th Annual ISSCC - San Francisco, CA, United States|
継続期間: 2000 2 7 → 2000 2 9
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering