TY - JOUR
T1 - A 128kb FeRAM macro for a contact/contactless smart card microcontroller
AU - Yamada, J.
AU - Miwa, T.
AU - Koike, H.
AU - Toyoshima, H.
AU - Amanuma, K.
AU - Kobayashi, S.
AU - Tatsumi, T.
AU - Maejima, Y.
AU - Hada, H.
AU - Mori, H.
AU - Takahashi, S.
AU - Takeuchi, H.
AU - Kunio, T.
PY - 2000/12/1
Y1 - 2000/12/1
N2 - A 128kb ferroelectric memory macro for a contact/contactless smart card microcontroller was studied. The macro uses 3-metal process capacitor-on-metal/via-stacked-plug (CMVP) memory cell, voltage regulation architecture, main/sub bit line and word line structure and dynamic-type offset sense amplifier. The memory cell array featuring low current consumption and memory size flexibility was produced using 3-metal wiring. The offset sense amplifier was used to improve ferroelectric memory reliability.
AB - A 128kb ferroelectric memory macro for a contact/contactless smart card microcontroller was studied. The macro uses 3-metal process capacitor-on-metal/via-stacked-plug (CMVP) memory cell, voltage regulation architecture, main/sub bit line and word line structure and dynamic-type offset sense amplifier. The memory cell array featuring low current consumption and memory size flexibility was produced using 3-metal wiring. The offset sense amplifier was used to improve ferroelectric memory reliability.
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M3 - Conference article
AN - SCOPUS:0034429693
SN - 0193-6530
SP - 270
EP - 271
JO - Digest of Technical Papers - IEEE International Solid-State Circuits Conference
JF - Digest of Technical Papers - IEEE International Solid-State Circuits Conference
T2 - 2000 IEEE International Solid-State Circuits Conference 47th Annual ISSCC
Y2 - 7 February 2000 through 9 February 2000
ER -