A 0.2-μm 180-GHz-f max 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications

Katsuyoshi Washio, Eiji Ohue, Hiromi Shimamoto, Katsuya Oda, Reiko Hayami, Yukihiro Kiyota, Masamichi Tanabe, Masao Kondo, Takashi Hashimoto, Takashi Harada

研究成果: Article査読

47 被引用数 (Scopus)

抄録

A technology for combining 0.2-μm self-aligned selective-epitaxial-growth (SEG) SiGe heterojunction bipolar transistors (HBTs) with CMOS transistors and high-quality passive elements has been developed for use in microwave wireless and optical communication systems. The technology has been applied to fabricate devices on a 200-mm SOI wafer based on a high-resistivity substrate (SOI/HRS). The fabrication process is almost completely compatible with the existing 0.2-μm bipolar-CMOS process because of the essential similarity of the two processes. SiGe HBTs with shallow-trench isolations (STIs) and deep-trench isolations (DTIs) and Ti-salicide electrodes exhibited high-frequency and high-speed capabilities with an f max of 180 GHz and and ECL-gate delay of 6.7 ps, along with good controllability and reliability and high yield. A high-breakdown-voltage HBT that could produce large output swings for the interface circuit was successfully added. CMOS devices (with gate lengths of 0.25 μm for nMOS and 0.3 μm for pMOS) exhibited excellent subthreshold slopes. Poly-Si resistors with a quasi-layer-by-layer structure had a low temperature coefficient. Varactors were constructed from the collector-base junctions of the SiGe HBTs. MIM capacitors were formed between the first and second metal layers by using plasma SiO 2 as an insulator. High-Q octagonal spiral inductors were fabricated by using a 3-μm thick fourth metal layer.

本文言語English
ページ(範囲)271-278
ページ数8
ジャーナルIEEE Transactions on Electron Devices
49
2
DOI
出版ステータスPublished - 2002 2月
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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