A dynamic frequency divider with 82.4GHz maximum operating frequency and a static frequency divider with an operating frequency of 60 GHz was reported for use in future millimeter-wave systems. Fabricated using self-aligned, selective epitaxial growth (SEG) SiGe heterojunction transistors (HBT), they provide a cut off frequency of 122 GHz, a maximum operating frequency of 163 GHz, and 5.5ps emitter coupled logic (ECL) gate delay. The transistor characteristics, schematic diagrams and frequency and current characteristics of the devices were described.
|ジャーナル||Digest of Technical Papers - IEEE International Solid-State Circuits Conference|
|出版ステータス||Published - 2000|
|イベント||2000 IEEE International Solid-State Circuits Conference 47th Annual ISSCC - San Francisco, CA, United States|
継続期間: 2000 2月 7 → 2000 2月 9
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