80-Gb/s low-driving-voltage InP DQPSK modulator with an n-p-i-n structure

Nobuhiro Kikuchi, Yasuo Shibata, Ken Tsuzuki, Hiroaki Sanjoh, Tomonari Sato, Eiichi Yamada, Tadao Ishibashi, Hiroshi Yasaka

研究成果: Article査読

29 被引用数 (Scopus)

抄録

We present a traveling-wave-electrode InP-based differential quadrature phase-shift keying modulator with a novel n-p-i-n waveguide structure. The structure features low electrical and optical propagation losses, which allow the modulator to operate at a high bit rate together with a low driving voltage and a low insertion loss. We successfully demonstrate 80-Gb/s modulation with a driving voltage of only 3 Vpp in a push-pull configuration. The chip size is just 7.5 mm × 1.3 mm.

本文言語English
ページ(範囲)787-789
ページ数3
ジャーナルIEEE Photonics Technology Letters
21
12
DOI
出版ステータスPublished - 2009 6 15
外部発表はい

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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