抄録
We report on an 80-Gbit/s 2:1 selector-type multiplexer IC using InAlAs/InGaAs/InP HEMTs incorporating a high-speed double-layer interconnection process with a low-permittivity insulator. The record operating data rate was measured on a 3-inch wafer. In spite of the bandwidth limitation on the measurement setup, clear eye patterns were successfully observed for the first time.
| 本文言語 | English |
|---|---|
| ページ | 183-186 |
| ページ数 | 4 |
| 出版ステータス | Published - 1997 12月 1 |
| 外部発表 | はい |
| イベント | Proceedings of the 1997 19th Annual GaAs IC Symposium - Anaheim, CA, USA 継続期間: 1997 10月 12 → 1997 10月 15 |
Other
| Other | Proceedings of the 1997 19th Annual GaAs IC Symposium |
|---|---|
| City | Anaheim, CA, USA |
| Period | 97/10/12 → 97/10/15 |
ASJC Scopus subject areas
- 工学（全般）