67-GHz static frequency divider using 0.2-μm self-aligned SiGe HBTs

Katsuyoshi Washio, Reiko Hayami, Eiji Ohue, Katsuya Oda, Masamichi Tanabe, Hiromi Shimamoto, Masao Kondo

研究成果: Conference article査読

28 被引用数 (Scopus)

抄録

A 67-GHz 1/4 static frequency divider using 0.2-μm self-aligned selective-epitaxial-growth SiGe heterqjunction bipolar transistors, with a 122-GHz cutoff frequency, a 163-GHz maximum oscillation frequency, and an average emitter coupled logic gate delay time of 5.65 ps, was developed. The pretracking master-slave toggle flip-flop (MS-TFF) of the divider increases the maximum operating frequency to about 15% higher than that of a conventional MS-TFF, yet the power consumption of the divider is 175 mW, which is 1/5 that of comparable dividers, at a supply voltage of -5.2 V. Index Terms -.

本文言語English
ページ(範囲)3-8
ページ数6
ジャーナルIEEE Transactions on Microwave Theory and Techniques
49
1
DOI
出版ステータスPublished - 2001
外部発表はい
イベント2000 Radio-Frequency Integrated Circuits (RFIC) Conference and Automatic Radio Frequency Techniques Group (ARFTG) Meeting - Boston, MA, United States
継続期間: 2000 6月 122000 6月 16

ASJC Scopus subject areas

  • 放射線
  • 凝縮系物理学
  • 電子工学および電気工学

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