60ns 1Mb nonvolatile ferroelectric memory with non-driven cell plate line write/read scheme

Hiroki Koike, Tetsuya Otsuki, Tohru Kimura, Masao Fukuma, Yoshihiro Hayashi, Yukihiko Maejima, Kazushi Amanuma, Nobuhiro Tanabe, Takeo Matsuki, Shinobu Saito, Tsuneo Takeuchi, Souta Kobayashi, Takemitsu Kunio, Takashi Hase, Yoichi Miyasaka, al et al

研究成果: Conference article査読

23 被引用数 (Scopus)

抄録

A nonvolatile ferroelectric RAM (WFRAM) based on a 1-transistor and 1-capacitor (IT/C) memory cell has potential for fast-access time and small-chip size comparable with DRAM. However, previously reported NVFRAMs are still slower that ordinary DRAMs, since driving a cell plate line NVFRAM is slow. Fortunately, using a non-driven cell plate line write/read (NDP) scheme could lead to NVFRAMs wit as fast access time as DRAMs.

本文言語English
ページ(範囲)368-369
ページ数2
ジャーナルDigest of Technical Papers - IEEE International Solid-State Circuits Conference
39
出版ステータスPublished - 1996 2 1
外部発表はい
イベントProceedings of the 1996 IEEE International Solid-State Circuits Conference - San Francisco, CA, USA
継続期間: 1996 2 81996 2 10

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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