TY - GEN
T1 - 5.2-THz single-mode lasing in current-injection distributed-feedback dual-gate graphene-channel field-effect transistor
AU - Tamamushi, Gen
AU - Watanabe, Takayuki
AU - Dubinov, Alexander A.
AU - Wako, Hiroyuki
AU - Satou, Akira
AU - Suemitsu, Tetsuya
AU - Ryzhii, Maxim
AU - Ryzhii, Victor
AU - Otsuji, Taiichi
PY - 2016/11/28
Y1 - 2016/11/28
N2 - A distributed-feedback (DFB) dual-gate graphene-channel field-effect transistor was fabricated as a current-injection terahertz laser. A single mode emission at 5.2 THz was observed at 100K beyond the threshold carrier injection level. Spectral narrowing with increasing the carrier injection around the threshold was also observed. The result is still preliminary level but the linewidth fairly agrees with numerical simulation based on DFB-Fabry-Perrot hybrid-mode modeling.
AB - A distributed-feedback (DFB) dual-gate graphene-channel field-effect transistor was fabricated as a current-injection terahertz laser. A single mode emission at 5.2 THz was observed at 100K beyond the threshold carrier injection level. Spectral narrowing with increasing the carrier injection around the threshold was also observed. The result is still preliminary level but the linewidth fairly agrees with numerical simulation based on DFB-Fabry-Perrot hybrid-mode modeling.
UR - http://www.scopus.com/inward/record.url?scp=85006106937&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85006106937&partnerID=8YFLogxK
U2 - 10.1109/IRMMW-THz.2016.7758354
DO - 10.1109/IRMMW-THz.2016.7758354
M3 - Conference contribution
AN - SCOPUS:85006106937
T3 - International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
BT - 41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016
PB - IEEE Computer Society
T2 - 41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016
Y2 - 25 September 2016 through 30 September 2016
ER -