5.2-THz single-mode lasing in current-injection distributed-feedback dual-gate graphene-channel field-effect transistor

Gen Tamamushi, Takayuki Watanabe, Alexander A. Dubinov, Hiroyuki Wako, Akira Satou, Tetsuya Suemitsu, Maxim Ryzhii, Victor Ryzhii, Taiichi Otsuji

研究成果: Conference contribution

抄録

A distributed-feedback (DFB) dual-gate graphene-channel field-effect transistor was fabricated as a current-injection terahertz laser. A single mode emission at 5.2 THz was observed at 100K beyond the threshold carrier injection level. Spectral narrowing with increasing the carrier injection around the threshold was also observed. The result is still preliminary level but the linewidth fairly agrees with numerical simulation based on DFB-Fabry-Perrot hybrid-mode modeling.

本文言語English
ホスト出版物のタイトル41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016
出版社IEEE Computer Society
ISBN(電子版)9781467384858
DOI
出版ステータスPublished - 2016 11 28
イベント41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016 - Copenhagen, Denmark
継続期間: 2016 9 252016 9 30

出版物シリーズ

名前International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
2016-November
ISSN(印刷版)2162-2027
ISSN(電子版)2162-2035

Other

Other41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016
国/地域Denmark
CityCopenhagen
Period16/9/2516/9/30

ASJC Scopus subject areas

  • エネルギー工学および電力技術
  • 電子工学および電気工学

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