5.2-THz single-mode lasing in current-injection distributed-feedback dual-gate graphene-channel field-effect transistor

Gen Tamamushi; Takayuki Watanabe; Alexander A. Dubinov; Hiroyuki Wako; Akira Satou; Tetsuya Suemitsu; Maxim Ryzhii; Victor Ryzhii; Taiichi Otsuji

doi:10.1109/IRMMW-THz.2016.7758354

5.2-THz single-mode lasing in current-injection distributed-feedback dual-gate graphene-channel field-effect transistor

Gen Tamamushi, Takayuki Watanabe, Alexander A. Dubinov, Hiroyuki Wako, Akira Satou, Tetsuya Suemitsu, Maxim Ryzhii, Victor Ryzhii, Taiichi Otsuji

電気通信研究所・ブロードバンド工学研究部門

研究成果: Conference contribution

抄録

A distributed-feedback (DFB) dual-gate graphene-channel field-effect transistor was fabricated as a current-injection terahertz laser. A single mode emission at 5.2 THz was observed at 100K beyond the threshold carrier injection level. Spectral narrowing with increasing the carrier injection around the threshold was also observed. The result is still preliminary level but the linewidth fairly agrees with numerical simulation based on DFB-Fabry-Perrot hybrid-mode modeling.

本文言語	English
ホスト出版物のタイトル	41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016
出版社	IEEE Computer Society
ISBN（電子版）	9781467384858
DOI	https://doi.org/10.1109/IRMMW-THz.2016.7758354
出版ステータス	Published - 2016 11 28
イベント	41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016 - Copenhagen, Denmark 継続期間: 2016 9 25 → 2016 9 30

出版物シリーズ

名前	International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
巻	2016-November
ISSN（印刷版）	2162-2027
ISSN（電子版）	2162-2035

Other

Other	41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016
Country	Denmark
City	Copenhagen
Period	16/9/25 → 16/9/30

ASJC Scopus subject areas

Energy Engineering and Power Technology
Electrical and Electronic Engineering

文献へのアクセス

10.1109/IRMMW-THz.2016.7758354

フィンガープリント「5.2-THz single-mode lasing in current-injection distributed-feedback dual-gate graphene-channel field-effect transistor」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル

Tamamushi, G., Watanabe, T., Dubinov, A. A., Wako, H., Satou, A., Suemitsu, T., Ryzhii, M., Ryzhii, V., & Otsuji, T. (2016). 5.2-THz single-mode lasing in current-injection distributed-feedback dual-gate graphene-channel field-effect transistor. In 41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016 [7758354] (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz; Vol. 2016-November). IEEE Computer Society. https://doi.org/10.1109/IRMMW-THz.2016.7758354

5.2-THz single-mode lasing in current-injection distributed-feedback dual-gate graphene-channel field-effect transistor. / Tamamushi, Gen; Watanabe, Takayuki; Dubinov, Alexander A.; Wako, Hiroyuki; Satou, Akira ; Suemitsu, Tetsuya; Ryzhii, Maxim; Ryzhii, Victor; Otsuji, Taiichi.

41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016. IEEE Computer Society, 2016. 7758354 (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz; Vol. 2016-November).

研究成果: Conference contribution

Tamamushi, G, Watanabe, T, Dubinov, AA, Wako, H, Satou, A , Suemitsu, T, Ryzhii, M, Ryzhii, V & Otsuji, T 2016, 5.2-THz single-mode lasing in current-injection distributed-feedback dual-gate graphene-channel field-effect transistor. in 41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016., 7758354, International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, vol. 2016-November, IEEE Computer Society, 41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016, Copenhagen, Denmark, 16/9/25. https://doi.org/10.1109/IRMMW-THz.2016.7758354

Tamamushi G, Watanabe T, Dubinov AA, Wako H, Satou A , Suemitsu T et al. 5.2-THz single-mode lasing in current-injection distributed-feedback dual-gate graphene-channel field-effect transistor. In 41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016. IEEE Computer Society. 2016. 7758354. (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz). https://doi.org/10.1109/IRMMW-THz.2016.7758354

Tamamushi, Gen ; Watanabe, Takayuki ; Dubinov, Alexander A. ; Wako, Hiroyuki ; Satou, Akira ; Suemitsu, Tetsuya ; Ryzhii, Maxim ; Ryzhii, Victor ; Otsuji, Taiichi. / 5.2-THz single-mode lasing in current-injection distributed-feedback dual-gate graphene-channel field-effect transistor. 41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016. IEEE Computer Society, 2016. (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz).

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abstract = "A distributed-feedback (DFB) dual-gate graphene-channel field-effect transistor was fabricated as a current-injection terahertz laser. A single mode emission at 5.2 THz was observed at 100K beyond the threshold carrier injection level. Spectral narrowing with increasing the carrier injection around the threshold was also observed. The result is still preliminary level but the linewidth fairly agrees with numerical simulation based on DFB-Fabry-Perrot hybrid-mode modeling.",

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