50 nm gate electrode patterning using a neutral-beam etching system

Shuichi Noda, Hirotomo Nishimori, Tohru Ida, Tsunetoshi Arikado, Katsunori Ichiki, Takuya Ozaki, Seiji Samukawa

研究成果: Article査読

59 被引用数 (Scopus)

抄録

The evaluation of poly-Si etching characteristics and the etch damage that was caused by neutral-beam (NB) source for use in the next generation gate patterning processes was discussed. The etching characteristics of fluorine (SF6) and chlorine (Cl2)-based gas chemistry were compared. The comparison of the process-damage with that caused by conventional plasma etching by measuring the oxide leakage current of antenna metal-oxide-semidonductor capacitors that had been etched using both etching systems was also presented. It was shown that the oxide leakage current achieved for a MOS capacitor etched by the neutral beam was one order of magnitude lower than that achieved by conventional plasma etching.

本文言語English
ページ(範囲)1506-1512
ページ数7
ジャーナルJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
22
4
DOI
出版ステータスPublished - 2004 7

ASJC Scopus subject areas

  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜

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