50 nm gate electrode patterning using a neutral-beam etching system

The evaluation of poly-Si etching characteristics and the etch damage that was caused by neutral-beam (NB) source for use in the next generation gate patterning processes was discussed. The etching characteristics of fluorine (SF₆) and chlorine (Cl₂)-based gas chemistry were compared. The comparison of the process-damage with that caused by conventional plasma etching by measuring the oxide leakage current of antenna metal-oxide-semidonductor capacitors that had been etched using both etching systems was also presented. It was shown that the oxide leakage current achieved for a MOS capacitor etched by the neutral beam was one order of magnitude lower than that achieved by conventional plasma etching.