抄録
The evaluation of poly-Si etching characteristics and the etch damage that was caused by neutral-beam (NB) source for use in the next generation gate patterning processes was discussed. The etching characteristics of fluorine (SF6) and chlorine (Cl2)-based gas chemistry were compared. The comparison of the process-damage with that caused by conventional plasma etching by measuring the oxide leakage current of antenna metal-oxide-semidonductor capacitors that had been etched using both etching systems was also presented. It was shown that the oxide leakage current achieved for a MOS capacitor etched by the neutral beam was one order of magnitude lower than that achieved by conventional plasma etching.
本文言語 | English |
---|---|
ページ(範囲) | 1506-1512 |
ページ数 | 7 |
ジャーナル | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
巻 | 22 |
号 | 4 |
DOI | |
出版ステータス | Published - 2004 7月 |
ASJC Scopus subject areas
- 凝縮系物理学
- 表面および界面
- 表面、皮膜および薄膜