TY - JOUR
T1 - 4.5 kV 3000 a high power reverse conducting gate turn-off thyristor.
AU - Hashimoto, Osamu
AU - Takahashi, Yoshikazu
AU - Kirihata, Humiaki
AU - Watanabe, Masahide
AU - Yamada, Osamu
PY - 1988
Y1 - 1988
N2 - A 4.5-kV 3000-A high-power reverse conducting gate-turn-off (GTO) thyristor has been developed. The key aspects of the design are electrical separation between the GTO and the diode, the use of a pin junction structure, and optimization of the anode shorting and the n+ buffer concentration. The electrical characteristics of the device, which achieves 4.5-kV blocking voltage, 3000-A turn-off current, and low switching loss, are reported.
AB - A 4.5-kV 3000-A high-power reverse conducting gate-turn-off (GTO) thyristor has been developed. The key aspects of the design are electrical separation between the GTO and the diode, the use of a pin junction structure, and optimization of the anode shorting and the n+ buffer concentration. The electrical characteristics of the device, which achieves 4.5-kV blocking voltage, 3000-A turn-off current, and low switching loss, are reported.
UR - http://www.scopus.com/inward/record.url?scp=0024139192&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0024139192&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:0024139192
SN - 0275-9306
SP - 915
EP - 921
JO - PESC Record - IEEE Annual Power Electronics Specialists Conference
JF - PESC Record - IEEE Annual Power Electronics Specialists Conference
ER -