40 Gb/s analog IC chipset for optical receiver using SiGe HBTs

T. Masuda, K. Ohhata, E. Ohue, K. Oda, M. Tanabe, H. Shimamoto, T. Onai, K. Washio

研究成果: Conference article査読

30 被引用数 (Scopus)


A self-aligned selective-epitaxial SiGe-based heterojunction bipolar transistor (HBT) is used to fabricate a 40 Gb/s optical receiver. The SiGe-based HBT provides low parasitic capacitance and high-frequency characteristics. 3.6fF collector capacitance and 0.6fF substrate capacitance at 5 V reverse bias voltage are obtained. The cutoff frequency and the maximum oscillation frequency of the transistors with an emitter area of 0.14×1.5 μm2 are 92 GHz and 108 GHz at 2 V collector-to-emitter bias, respectively. The early voltage of >100 V is suitable for analog circuits.

ページ(範囲)314-315, 454
ジャーナルDigest of Technical Papers - IEEE International Solid-State Circuits Conference
出版ステータスPublished - 1998 1月 1
イベントProceedings of the 1998 IEEE 45th International Solid-State Circuits Conference, ISSCC - San Francisco, CA, USA
継続期間: 1998 2月 51998 2月 7

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学


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