TY - JOUR
T1 - 40 Gb/s analog IC chipset for optical receiver using SiGe HBTs
AU - Masuda, T.
AU - Ohhata, K.
AU - Ohue, E.
AU - Oda, K.
AU - Tanabe, M.
AU - Shimamoto, H.
AU - Onai, T.
AU - Washio, K.
PY - 1998/1/1
Y1 - 1998/1/1
N2 - A self-aligned selective-epitaxial SiGe-based heterojunction bipolar transistor (HBT) is used to fabricate a 40 Gb/s optical receiver. The SiGe-based HBT provides low parasitic capacitance and high-frequency characteristics. 3.6fF collector capacitance and 0.6fF substrate capacitance at 5 V reverse bias voltage are obtained. The cutoff frequency and the maximum oscillation frequency of the transistors with an emitter area of 0.14×1.5 μm2 are 92 GHz and 108 GHz at 2 V collector-to-emitter bias, respectively. The early voltage of >100 V is suitable for analog circuits.
AB - A self-aligned selective-epitaxial SiGe-based heterojunction bipolar transistor (HBT) is used to fabricate a 40 Gb/s optical receiver. The SiGe-based HBT provides low parasitic capacitance and high-frequency characteristics. 3.6fF collector capacitance and 0.6fF substrate capacitance at 5 V reverse bias voltage are obtained. The cutoff frequency and the maximum oscillation frequency of the transistors with an emitter area of 0.14×1.5 μm2 are 92 GHz and 108 GHz at 2 V collector-to-emitter bias, respectively. The early voltage of >100 V is suitable for analog circuits.
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M3 - Conference article
AN - SCOPUS:0031655067
SN - 0193-6530
SP - 314-315, 454
JO - Digest of Technical Papers - IEEE International Solid-State Circuits Conference
JF - Digest of Technical Papers - IEEE International Solid-State Circuits Conference
T2 - Proceedings of the 1998 IEEE 45th International Solid-State Circuits Conference, ISSCC
Y2 - 5 February 1998 through 7 February 1998
ER -