3D integration of memories including heterogeneous integration

研究成果: Conference contribution

抄録

In this invited paper, 3D integration technology of memories including heterogeneous integration is overviewed. Especially, in 3D integration of memory part, 3D NAND/NOR memory, 3D crosspoint memory with ReRAM and PCM, and 3D STT-MRAM are discussed for realizing high density and so on. Moreover, heterogeneous integration is shown from view point of multifunctional capability.

本文言語English
ホスト出版物のタイトルVLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781665419345
DOI
出版ステータスPublished - 2021 4 19
イベント2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021 - Hsinchu, Taiwan, Province of China
継続期間: 2021 4 192021 4 22

出版物シリーズ

名前VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings

Conference

Conference2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021
国/地域Taiwan, Province of China
CityHsinchu
Period21/4/1921/4/22

ASJC Scopus subject areas

  • ハードウェアとアーキテクチャ
  • 電子工学および電気工学
  • 制御と最適化

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