Laser-assisted atom probe tomography was used to identify the impurity distribution in Si heterojunction (SHJ) solar cells composed of thin doped/intrinsic amorphous Si layers on the textured surface of a crystalline Si wafer. A site-specific lift-out technique involving a focused ion beam enabled the selection of a ∼2 2 μm2 area on an arbitrary pyramidal surface. The distributions of B, P and C in the amorphous Si layers introduced by p-type (trimethyl-borane or diborane) or n-type (phosphine) dopant gases were investigated. Standard guidelines for the assessment of the H content in amorphous Si of SHJ solar cells were provided.
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