300 μm Deep through silicon via in laser-ablated CMOS multi-project wafer for cost-effective development of integrated MEMS

Yukio Suzuki, Hideyuki Fukushi, Masanori Muroyama, Yoshiyuki Hata, Takahiro Nakayama, Rakesh Chand, Hideki Hirano, Yutaka Nonomura, Hirofumi Funabashi, Shuji Tanaka

研究成果: Conference contribution

15 被引用数 (Scopus)

抄録

This study has opened a possibility to fabricate through silicon vias (TSV) in a LSI wafer available by commercial multi-project wafer (MPW) service and integrate the LSI and MEMS by wafer bonding. 300 μm deep Cu annular type TSV were fabricated in a TSMC 0.18 μm CMOS LSI MPW cut into 4″ diameter. The developed TSV process managed mechanically fragile property of the laser-ablated MPW by low stress TEOS PECVD SiO2 backfilling, surface planarization, temporally wafer support etc. The LSI and MEMS were integrated by Au-Au thermocompression bonding at 300°C, and the completed device worked via the TSV as designed. 'Tohoku TSV CMOS-MEMS platform' presented in this paper gives many chances for cost-effective development of surface-mountable CMOS-integrated MEMS.

本文言語English
ホスト出版物のタイトル2017 IEEE 30th International Conference on Micro Electro Mechanical Systems, MEMS 2017
出版社Institute of Electrical and Electronics Engineers Inc.
ページ744-748
ページ数5
ISBN(電子版)9781509050789
DOI
出版ステータスPublished - 2017 2 23
イベント30th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2017 - Las Vegas, United States
継続期間: 2017 1 222017 1 26

出版物シリーズ

名前Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
ISSN(印刷版)1084-6999

Other

Other30th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2017
CountryUnited States
CityLas Vegas
Period17/1/2217/1/26

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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