A 2.5kV 100A μ(micro)-stack IGBT has been developed. This is the first work to demonstrate the possibility of a high voltage, high current and high reliable flat-packaged MOS controlled device. The 20mm square chip is press-contacted with an emitter electrode having four rectangular p-base regions on which the MOS gate is not arranged. The great advantage of this structure is the double side cooling and the emitter wire bondingless. The μ-stack IGBT shows the high blocking voltage of 2.5kV, the typical saturation voltage of 3.5V at the collector current Ic=100A, the turn-off capability of 3×Ic, and the good pressure contact for the electrical and thermal characteristics in the range from 100 to 800kg/chip.
|出版ステータス||Published - 1994|
|イベント||Proceedings of the 1994 6th IEEE International Symposium on Power Semiconductor Devices & ICs - Davos, Switz|
継続期間: 1994 5月 31 → 1994 6月 2
|Other||Proceedings of the 1994 6th IEEE International Symposium on Power Semiconductor Devices & ICs|
|Period||94/5/31 → 94/6/2|
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