2.5 kV-100 a flat-packaged IGBT (micro-stack IGBT)

Yoshikazu Takahashi, Takeharu Koga, Humiaki Kirihata, Yasukazu Seki

研究成果: Article査読

11 被引用数 (Scopus)

抄録

A 2.5 kV-100 A flat-packaged IGBT (micro-stack IGBT) has been developed. This is the first work to demonstrate the possibility of a high-voltage, high-current, and highly reliable flat-packaged MOS controlled device. The 20-mm square chip is press-contacted with an emitter electrode having four rectangular p-base regions on which the MOS gate is not arranged. The great advantage of this structure is the double side cooling and the emitter wire bondingless. The micro-stack IGBT shows the high-blocking voltage of 2.5 kV, the typical on-state voltage of 3.5 V at the collector current Ic = 100 A, the turn-off capability of 8 × Ic, and the good pressure contact for the electrical and thermal characteristics in the range from 2 to 8 kN/chip.

本文言語English
ページ(範囲)2276-2282
ページ数7
ジャーナルIEEE Transactions on Electron Devices
43
12
DOI
出版ステータスPublished - 1996
外部発表はい

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

フィンガープリント 「2.5 kV-100 a flat-packaged IGBT (micro-stack IGBT)」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル