224-ke Saturation signal global shutter CMOS image sensor with in-pixel pinned storage and lateral overflow integration capacitor

Yorito Sakano, Shin Sakai, Yoshiaki Tashiro, Yuri Kato, Kentaro Akiyama, Katsumi Honda, Mamoru Sato, Masaki Sakakibara, Tadayuki Taura, Kenji Azami, Tomoyuki Hirano, Yusuke Oike, Yasunori Sogo, Takayuki Ezaki, Tadakuni Narabu, Teruo Hirayama, Shigetoshi Sugawa

研究成果: Conference contribution

17 被引用数 (Scopus)

抄録

The required incorporation of an additional in-pixel retention node for global shutter complementary metal-oxide semiconductor (CMOS) image sensors means that achieving a large saturation signal presents a challenge. This paper reports a 3.875-μm pixel single exposure global shutter CMOS image sensor with an in-pixel pinned storage (PST) and a lateral-overflow integration capacitor (LOFIC), which extends the saturation signal to 224 ke, thereby enabling the saturation signal per unit area to reach 14.9 ke/μm. This pixel can assure a large saturation signal by using a LOFIC for accumulation without degrading the image quality under dark and low illuminance conditions owing to the PST.

本文言語English
ホスト出版物のタイトル2017 Symposium on VLSI Circuits, VLSI Circuits 2017
出版社Institute of Electrical and Electronics Engineers Inc.
ページC250-C251
ISBN(電子版)9784863486065
DOI
出版ステータスPublished - 2017 8月 10
イベント31st Symposium on VLSI Circuits, VLSI Circuits 2017 - Kyoto, Japan
継続期間: 2017 6月 52017 6月 8

出版物シリーズ

名前IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Other

Other31st Symposium on VLSI Circuits, VLSI Circuits 2017
国/地域Japan
CityKyoto
Period17/6/517/6/8

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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