21.5dBm Power-Handling 5GHz Transmit/Receive CMOS Switch Realized by Voltage Division Effect of Stacked Transistor Configuration with Depletion-Layer-Extended Transistors (DETs)

Takahiro Ohnakado, Satoshi Yamakawa, Takaaki Murakami, Akihiko Furukawa, Eiji Taniguchi, Hiro Omi Ueda, Noriharu Suematsu, Tatsuo Oomori

研究成果: Paper査読

3 被引用数 (Scopus)

抄録

This paper reports for the first time an over-20dBm power-handling 5GHz transmit/receive (T/R) CMOS switch. The Depletion-layer-Extended Transistor (DET), which possesses high effective substrate resistance, enables the voltage division effect of the stacked transistor configuration to work in CMOS, thus realizing this high power-handling capability. Furthermore, despite insertion-loss (IL) degradation due to double on-resistance with the stacked transistor configuration, a receive-mode IL (I L@RX) of as low as 1.44dB at 5GHz is accomplished with the benefit of the IL improvement effects in the DET, in addition to a very low transmit-mode IL (IL@TX) of 0.95dB at 5GHz.

本文言語English
ページ25-28
ページ数4
出版ステータスPublished - 2003 10月 2
外部発表はい
イベント2003 Symposium on VLSI Circuits - Kyoto, Japan
継続期間: 2003 6月 122003 6月 14

Other

Other2003 Symposium on VLSI Circuits
国/地域Japan
CityKyoto
Period03/6/1203/6/14

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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