21.5-dBm Power-Handling 5-GHz Transmit/Receive CMOS Switch Realized by Voltage Division Effect of Stacked Transistor Configuration With Depletion-Layer-Extended Transistors (DETs)

Takahiro Ohnakado, Satoshi Yamakawa, Takaaki Murakami, Akihiko Furukawa, Eiji Taniguchi, Hiro Omi Ueda, Noriharu Suematsu, Tatsuo Oomori

研究成果: Article

55 引用 (Scopus)

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This paper reports a 21.5-dBm power-handling 5-GHz transmit/receive CMOS switch utilizing the depletion-layer-extended transistor (DET), which possesses high effective substrate resistance and enables the voltage division effect of the stacked transistor configuration to work in the CMOS switch. Furthermore, low insertion losses of 0.95 and 1.44 dB are accomplished at 5 GHz in the transmit and receive modes, respectively, with the benefit of the insertion-loss improvement effects in the DET. At the same time, high isolations of more than 22 dB were obtained at 5 GHz in the transmit and receive modes with the adoption of the shunt/series type circuit.

元の言語English
ページ(範囲)577-584
ページ数8
ジャーナルIEEE Journal of Solid-State Circuits
39
発行部数4
DOI
出版物ステータスPublished - 2004 4 1
外部発表Yes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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