2-Mb SPRAM design: Bi-directional current write and parallelizing-direction current read based on spin-transfer torque switching

T. Kawahara, R. Takemura, K. Miura, J. Hayakawa, S. Ikeda, Y. M. Lee, R. Sasaki, Y. Goto, K. Ito, T. Meguro, F. Matsukura, H. Takahashi, H. Matsuoka, H. Ohno

研究成果: Article

2 引用 (Scopus)

抜粋

A 1.8 V 2-Mb SPRAM (SPin-transfer torque RAM) chip using 0.2-μm logic process with MgO tunneling barrier cell is reviewed, which demonstrates the circuit technologies for potential low power non-volatile RAM, or universal memory. This chip features: an array scheme with bit-by-bit bi-directional current write to achieve proper spin-transfer torque writing of 100-ns, and parallelizing-direction current reading with low voltage bit-line that leads to 40-ns access time.

元の言語English
ページ(範囲)3929-3933
ページ数5
ジャーナルPhysica Status Solidi (A) Applications and Materials Science
204
発行部数12
DOI
出版物ステータスPublished - 2007 12

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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