1.9 GHz single-chip RF front-end GaAs MMIC with low-distortion cascode FET mixer for personal handy-phone system terminals

Masatoshi Nakayama, Ken ichi Horiguchi, Kazuya Yamamoto, Yutaka Yoshii, Shigeru Sugiyama, Noriharu Suematsu, Tadashi Takagi

研究成果: Paper査読

6 被引用数 (Scopus)

抄録

This paper describes new single-chip RF front-end GaAs MMIC for 1.9 GHz Japanese PHS handheld terminals. The IC consists of a high power amplifier, a T/R switch, a low noise amplifier, a newly developed low distortion cascode FET mixer and a negative voltage generator for FET gate bias voltage. The IC has high performance as RF front-end of terminals.

本文言語English
ページ205-208
ページ数4
出版ステータスPublished - 1998 1 1
外部発表はい
イベントProceedings of the 1998 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Baltimore, MD, USA
継続期間: 1998 6 71998 6 11

Other

OtherProceedings of the 1998 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
CityBaltimore, MD, USA
Period98/6/798/6/11

ASJC Scopus subject areas

  • 工学(全般)

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