抄録
InP/GalnAsP buried heterostructure (BH) lasers for the 1.5 µm region have been fabricated on semi-insulating InP substrates. The threshold current of the lasers is as low as 38 mA under CW operation at 25°C, which is nearly the same as for BH lasers fabricated on n-type InP substrates.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 12-14 |
| ページ数 | 3 |
| ジャーナル | Electronics Letters |
| 巻 | 17 |
| 号 | 1 |
| DOI | |
| 出版ステータス | Published - 1981 1 8 |
| 外部発表 | はい |
ASJC Scopus subject areas
- Electrical and Electronic Engineering