12-ps ECL using low-base-resistance si bipolar transistor by self-aligned Metal/IDP technology

Takahiro Onai, Eiji Ohue, Masamichi Tanabe, Katsuyoshi Washio

研究成果: Article

8 引用 (Scopus)

抜粋

A self-aligned metal/IDP (SMI) technology is proposed to reduce the external base resistance and to enable fabrication of high-speed bipolar transistors. This SMI technology produces a self-aligned base electrode of stacked layers of metal and in situ-doped poly-Si (IDP) with a small thermal budget by selective tungsten CVD. It provides the low base resistance and a shallow link base for the small-collector capacitance and the high-cutoff frequency. The base resistance is reduced to a half that in a transistor having a conventional poly-Si base electrode. A maximum oscillation frequency of 81 GHz and a 12.2-ps gate delay time in an ECL ring oscillator at a voltage swing of 250 mV were achieved by using the SMI technology even with an ion-implanted base.

元の言語English
ページ(範囲)2207-2212
ページ数6
ジャーナルIEEE Transactions on Electron Devices
44
発行部数12
DOI
出版物ステータスPublished - 1997 12 1
外部発表Yes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

フィンガープリント 12-ps ECL using low-base-resistance si bipolar transistor by self-aligned Metal/IDP technology' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用