116GHz CMOS injection locked oscillator with -99.3dBc/Hz at 1MHz offset phase noise

Mizuki Motoyoshi, Minoru Fujishima

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

To satisfy consumer demand for ultrahigh-speed wireless communication, oscillator in the D-band using CMOS as well as compound semiconductors are under development. However, the phase noise is large because a small device is used to achieve a high operating frequency. In the D-band oscillator, suppressing 1/f noise is effective in the improving the phase noise. In this study, a 116GHz CMOS injection locked oscillator (ILO) with 99.3dBc/Hz at 1MHz offset phase noise is proposed. To improve the phase noise, a master-slave topology and injection locking are used. The circuit is fabricated by 65nm 1P12M CMOS process. The core size of the chip is 530×520m2 including pads. At a supply voltage of 0.6V, the phase noise was 99.3dBc/Hz at 1MHz offset, and the power consumption was 1.45mW. The oscillator can be tuned from 116.05 to 116.57GHz. The FOM of the proposed ILO is 18.7dB higher than those of previously reported oscillators.

本文言語English
ホスト出版物のタイトル2010 Asia-Pacific Microwave Conference Proceedings, APMC 2010
ページ786-789
ページ数4
出版ステータスPublished - 2010 12 1
外部発表はい
イベント2010 Asia-Pacific Microwave Conference, APMC 2010 - Yokohama, Japan
継続期間: 2010 12 72010 12 10

出版物シリーズ

名前Asia-Pacific Microwave Conference Proceedings, APMC

Other

Other2010 Asia-Pacific Microwave Conference, APMC 2010
CountryJapan
CityYokohama
Period10/12/710/12/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

フィンガープリント 「116GHz CMOS injection locked oscillator with -99.3dBc/Hz at 1MHz offset phase noise」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル