(100)- and (110)-oriented nMOSFETs with highly scaled EOT in La-silicate/Si interface for multi-gate architecture

T. Kawanago, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai

    研究成果: Conference contribution

    1 被引用数 (Scopus)

    抄録

    This paper reports on detailed comparison between (100)- and (110)-oriented nMOSFETs with direct contact of La-silicate/Si interface structure for expansion to multi-gate architecture including FinFETs, trigate FETs, and nanowire FETs. Scaled EOT of 0.73 nm for (110)-oriented nMOSFETs has been achieved as well as (100)-oriented nMOSFETs. Although the large interface state density originating from (110) orientation was observed, fairly nice interfacial property was obtained from (110)-oriented nMOSFETs at scaled EOT region. Moreover, larger interface state density in (110) orientation did not affect on Vth instability. It was found that Vth shift of nMOSFETs is mainly caused by bulk trapping of electron in La-silicate as well as Hf-based oxides.

    本文言語English
    ホスト出版物のタイトル2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012
    ページ89-92
    ページ数4
    DOI
    出版ステータスPublished - 2012
    イベント42nd European Solid-State Device Research Conference, ESSDERC 2012 - Bordeaux, France
    継続期間: 2012 9 172012 9 21

    出版物シリーズ

    名前European Solid-State Device Research Conference
    ISSN(印刷版)1930-8876

    Other

    Other42nd European Solid-State Device Research Conference, ESSDERC 2012
    国/地域France
    CityBordeaux
    Period12/9/1712/9/21

    ASJC Scopus subject areas

    • 電子工学および電気工学
    • 安全性、リスク、信頼性、品質管理

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