10 Tbit/inch2 ferroelectric data storage with offset voltage application method

Sunao Hashimoto, Yasuo Cho

研究成果: Conference contribution

抄録

Fcrroelectrics are expected to become one of the next generation ultra-high density data storage media. The requirements for pulse amplitude and the duration to switch the domain were both markedly decreased by using a new domain stabilizing method; offset voltage application method. Additionally, with this method it became possible to invert a smaller domain with a diameter of less than 10 nm. Finally, significant progress was made regarding the memory density for ferroelectric data storage, and an area density of 10.1 Tera-bit/inch 2 was successfully achieved. This represents the highest memory density for rewritable data storage reported to date.

本文言語English
ホスト出版物のタイトルFerroelectric Thin Films XIII
ページ245-250
ページ数6
出版ステータスPublished - 2005 12 1
イベント2005 MRS Fall Meeting - Boston, MA, United States
継続期間: 2005 11 282005 12 2

出版物シリーズ

名前Materials Research Society Symposium Proceedings
902
ISSN(印刷版)0272-9172

Other

Other2005 MRS Fall Meeting
国/地域United States
CityBoston, MA
Period05/11/2805/12/2

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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