10 nmf perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction with over 400°C high thermal tolerance by boron diffusion control

Hiroaki Honjo, Hideo Sato, Shoji Ikeda, Soshi Sato, T. Watanebe, Sadahiko Miura, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, Hiroki Koike, Masakazu Muraguchi, Masaaki Niwa, Kenchi Ito, Hideo Ohno, Tetsuo Endoh

研究成果: Conference contribution

35 被引用数 (Scopus)

抄録

We have developed a perpendicular-anisotropy magnetic tunnel junction (p-MTJ) stack with CoFeB free layer and Co/Pt multilayer based synthetic ferrimagnetic (SyF) pinned layer that withstand annealing at a temperature up to 420°C (that compatible with CMOS BEOL process) by controlling boron diffusion. We demonstrated the 10 nmφ p-MTJ with double CoFeB/MgO interface tolerable against 400°C annealing which is a requisite building block for realization of high density spin transfer torque magnetic random access memory (STT-MRAM) in reduced dimensions.

本文言語English
ホスト出版物のタイトル2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers
出版社Institute of Electrical and Electronics Engineers Inc.
ページT160-T161
ISBN(電子版)9784863485013
DOI
出版ステータスPublished - 2015 8 25
イベントSymposium on VLSI Technology, VLSI Technology 2015 - Kyoto, Japan
継続期間: 2015 6 162015 6 18

出版物シリーズ

名前Digest of Technical Papers - Symposium on VLSI Technology
2015-August
ISSN(印刷版)0743-1562

Other

OtherSymposium on VLSI Technology, VLSI Technology 2015
国/地域Japan
CityKyoto
Period15/6/1615/6/18

ASJC Scopus subject areas

  • 電子工学および電気工学

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