0.03-μm gate-length enhancement-mode InAlAs/InGaAs/InP MODFET's with 300 GHz fT and 2 S/mm extrinsic transconductance

D. Xu, T. Suemitsu, J. Osaka, Y. Umeda, Y. Yamane, Y. Ishii, T. Ishii, T. Tamamura

研究成果: Article査読

21 被引用数 (Scopus)

抄録

We have developed high-performance enhancement-mode InP-based modulation-doped field-effect transistors with 0.03-μm gate-length. A record high current gain cutoff frequency exceeding 300 GHz has been achieved, and the maximum extrinsic transconductance is as high as 2 S/mm with an associated drain current of 0.5 A/mm at a drain bias of 1 V. This high performance is a result of the reduction of gate length, the use of the high barrier metal Pt as gate electrodes, and most importantly, the employment of the well-developed wet-etching technology that allows the formation of a very deep gate groove while retaining small side etching. The excellent E-MODFET performance opens up the possibility of implementing ever faster high-speed circuits based on direct-coupled FET logic.

本文言語English
ページ(範囲)206-208
ページ数3
ジャーナルIEEE Electron Device Letters
20
5
DOI
出版ステータスPublished - 1999 5
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

フィンガープリント

「0.03-μm gate-length enhancement-mode InAlAs/InGaAs/InP MODFET's with 300 GHz f<sub>T</sub> and 2 S/mm extrinsic transconductance」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル