(0 0 6)-oriented α-Al2O3 films prepared in CO2-H2 atmosphere by laser chemical vapor deposition using a diode laser

Yu You; Akihiko Ito; Rong Tu; Takashi Goto

doi:10.1016/j.mseb.2011.05.030

(0 0 6)-oriented α-Al₂O₃ films prepared in CO₂-H₂ atmosphere by laser chemical vapor deposition using a diode laser

Yu You, Akihiko Ito, Rong Tu, Takashi Goto

金属材料研究所・材料プロセス・評価研究部

研究成果: Article › 査読

1 被引用数 (Scopus)

抄録

(0 0 6)-oriented α-Al₂O₃ films were prepared by laser chemical vapor deposition (LCVD) using aluminum acetylacetonate (Al(acac)₃) in CO₂-H₂ atmosphere. The effects of the CO₂ mole fraction (FCO₂) and laser power (P _L) on the crystal phase, microstructure, and deposition rate (R _dep) were investigated. α- and γ-Al₂O ₃ mixture films were prepared at P_L = 90 W (deposition temperature of 818 K), whereas (0 0 6)-oriented single-phase α-Al ₂O₃ films were obtained at P_L = 110 W (863 K). The texture coefficient and the grain size of the (0 0 6)-oriented films increased with increasing FCO₂. The orientation of the α-Al₂O₃ films changed from (0 0 6) to (1 0 4) to (0 1 2) with increasing P_L (T_dep). The R_dep of the (0 0 6)-oriented α-Al₂O₃ films increased with increasing FCO₂.

本文言語	English
ページ（範囲）	984-989
ページ数	6
ジャーナル	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
巻	176
号	13
DOI	https://doi.org/10.1016/j.mseb.2011.05.030
出版ステータス	Published - 2011 8 15

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mseb.2011.05.030

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引用スタイル

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title = "(0 0 6)-oriented α-Al2O3 films prepared in CO2-H2 atmosphere by laser chemical vapor deposition using a diode laser",

abstract = "(0 0 6)-oriented α-Al2O3 films were prepared by laser chemical vapor deposition (LCVD) using aluminum acetylacetonate (Al(acac)3) in CO2-H2 atmosphere. The effects of the CO2 mole fraction (FCO2) and laser power (P L) on the crystal phase, microstructure, and deposition rate (R dep) were investigated. α- and γ-Al2O 3 mixture films were prepared at PL = 90 W (deposition temperature of 818 K), whereas (0 0 6)-oriented single-phase α-Al 2O3 films were obtained at PL = 110 W (863 K). The texture coefficient and the grain size of the (0 0 6)-oriented films increased with increasing FCO2. The orientation of the α-Al2O3 films changed from (0 0 6) to (1 0 4) to (0 1 2) with increasing PL (Tdep). The Rdep of the (0 0 6)-oriented α-Al2O3 films increased with increasing FCO2.",

keywords = "Laser CVD, α-AlO, Morphology, c-Axis growth",

author = "Yu You and Akihiko Ito and Rong Tu and Takashi Goto",

year = "2011",

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doi = "10.1016/j.mseb.2011.05.030",

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T1 - (0 0 6)-oriented α-Al2O3 films prepared in CO2-H2 atmosphere by laser chemical vapor deposition using a diode laser

AU - You, Yu

AU - Ito, Akihiko

AU - Tu, Rong

AU - Goto, Takashi

PY - 2011/8/15

Y1 - 2011/8/15

N2 - (0 0 6)-oriented α-Al2O3 films were prepared by laser chemical vapor deposition (LCVD) using aluminum acetylacetonate (Al(acac)3) in CO2-H2 atmosphere. The effects of the CO2 mole fraction (FCO2) and laser power (P L) on the crystal phase, microstructure, and deposition rate (R dep) were investigated. α- and γ-Al2O 3 mixture films were prepared at PL = 90 W (deposition temperature of 818 K), whereas (0 0 6)-oriented single-phase α-Al 2O3 films were obtained at PL = 110 W (863 K). The texture coefficient and the grain size of the (0 0 6)-oriented films increased with increasing FCO2. The orientation of the α-Al2O3 films changed from (0 0 6) to (1 0 4) to (0 1 2) with increasing PL (Tdep). The Rdep of the (0 0 6)-oriented α-Al2O3 films increased with increasing FCO2.

AB - (0 0 6)-oriented α-Al2O3 films were prepared by laser chemical vapor deposition (LCVD) using aluminum acetylacetonate (Al(acac)3) in CO2-H2 atmosphere. The effects of the CO2 mole fraction (FCO2) and laser power (P L) on the crystal phase, microstructure, and deposition rate (R dep) were investigated. α- and γ-Al2O 3 mixture films were prepared at PL = 90 W (deposition temperature of 818 K), whereas (0 0 6)-oriented single-phase α-Al 2O3 films were obtained at PL = 110 W (863 K). The texture coefficient and the grain size of the (0 0 6)-oriented films increased with increasing FCO2. The orientation of the α-Al2O3 films changed from (0 0 6) to (1 0 4) to (0 1 2) with increasing PL (Tdep). The Rdep of the (0 0 6)-oriented α-Al2O3 films increased with increasing FCO2.

KW - Laser CVD, α-AlO

KW - Morphology

KW - c-Axis growth

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