遠藤 哲郎

研究成果

年別の研究成果 1988 2009 2010 2011 2012 2013 2014 2015 2016 2017 2019 2020 2021 2022

• 216 Article
• 104 Conference contribution
• 16 Conference article
• 5 Paper
• 10 その他
  • 3 Review article
  • 2 Chapter
  • 2 Comment/debate
  • 2 Editorial
  • 1 Letter

年別の研究成果

年別の研究成果

検索結果

• 2022

  Effect of interfacial nitrogen defects on tunnel magnetoresistance in an Fe/MgO/Fe magnetic tunnel junction

  Ogawa, Y., Araidai, M., Endoh, T. & Shiraishi, K., 2022 12月 7, In: Journal of Applied Physics. 132, 21, 213904.

  研究成果: Article › 査読

  • Tunneling Magnetoresistance 100%
  • Defects 100%
  • Nitrogen 75%
  • Tunnel Junction 75%
  • Atoms 50%

• Effect of Magnetic Coupling between Two CoFeB Layers on Thermal Stability in Perpendicular Magnetic Tunnel Junctions with MgO/CoFeB/Insertion Layer/CoFeB/MgO Free Layer

  Nishioka, K., Miura, S., Honjo, H., Naganuma, H., Nguyen, T. V. A., Watanabe, T., Ikeda, S. & Endoh, T., 2022 2月 1, In: IEEE Transactions on Magnetics. 58, 2

  研究成果: Article › 査読

  • Magnesium Oxide 100%
  • Value 83%
  • Couplings 66%
  • Model 50%
  • Area 50%
  2 被引用数 (Scopus)

• Effect of oxygen incorporation on dynamic magnetic properties in Ta-O/Co-Fe-B bilayer films under out-of-plane and in-plane magnetic fields

  Nguyen, T. V. A., Saito, Y., Naganuma, H., Ikeda, S., Endoh, T. & Endo, Y., 2022 3月 1, In: AIP Advances. 12, 3, 035133.

  研究成果: Article › 査読

  • Intraperitoneal 100%
  • Yaw 83%
  • Plane 66%
  • Oxidation 50%
  • Oxidation Reaction 50%

• Efficient BCH Code Encoding and Decoding Algorithm with Divisor-Distance-Based Polynomial Division for STT-MRAM

  Zhang, L., Ma, Y. & Endoh, T., 2022, (Accepted/In press) In: IEEE Transactions on Magnetics.

  研究成果: Article › 査読

  • Distance 100%
  • Random Access Memory 57%
  • Divider 57%
  • Polynomial Division 57%
  • Error-correcting code 42%

• Energy-Efficient Convolution Module with Flexible Bit-Adjustment Method and ADC Multiplier Architecture for Industrial IoT

  Li, T., Ma, Y., Yoshikawa, K., Nomura, O. & Endoh, T., 2022 5月 1, In: IEEE Transactions on Industrial Informatics. 18, 5, p. 3055-3065 11 p.

  研究成果: Article › 査読

  • Module 100%
  • Edge 66%
  • Format 66%
  • Multiplier 66%
  • Multiplication 50%
  1 被引用数 (Scopus)

• Enhancement of current to spin-current conversion and spin torque efficiencies in a synthetic antiferromagnetic layer based on a Pt/Ir/Pt spacer layer

  Saito, Y., Ikeda, S. & Endoh, T., 2022 2月 1, In: Physical Review B. 105, 5, 054421.

  研究成果: Article › 査読

  • Electron Spin 100%
  • Spin 100%
  • Multilayers 85%
  • Antiferromagnetic 57%
  • Torque 57%
  2 被引用数 (Scopus)

• From Algorithm to Module: Adaptive and Energy-Efficient Quantization Method for Edge Artificial Intelligence in IoT Society

  Li, T., Ma, Y. & Endoh, T., 2022, (Accepted/In press) In: IEEE Transactions on Industrial Informatics. p. 1-13 13 p.

  研究成果: Article › 査読

  • Quantization 100%
  • Deep Neural Network 15%
  • Artificial Intelligence 15%
  • Energy Efficient 10%
  • Functional Module 10%

• Influence of Iridium Sputtering Conditions on the Magnetic Properties of Co/Pt-Based Iridium-Synthetic Antiferromagnetic Coupling Reference Layer

  Honjo, H., Naganuma, H., Nishioka, K., Nguyen, T. V. A., Yasuhira, M., Ikeda, S. & Endoh, T., 2022 8月 1, In: IEEE Transactions on Magnetics. 58, 8, 1400305.

  研究成果: Article › 査読

  • Iridium 100%
  • Tunneling Magnetoresistance 30%
  • Magnetic Tunnel Junction 25%
  • References 25%
  • Energy 20%

• Influence of sidewall damage on thermal stability in quad-CoFeB/MgO interfaces by micromagnetic simulation

  Naganuma, H., Honjo, H., Kaneta, C., Nishioka, K., Ikeda, S. & Endoh, T., 2022 12月 1, In: AIP Advances. 12, 12, 125317.

  研究成果: Article › 査読

  Open Access

  • Magnesium Oxide 100%
  • Magnetic Tunnel Junction 40%
  • Side Wall 33%
  • Energy Barrier 26%
  • Micromagnetics 20%

• Perpendicular Magnetic Tunnel Junctions With Four Anti-Ferromagnetically Coupled Co/Pt Pinning Layers

  Honjo, H., Nishioka, K., Miura, S., Naganuma, H., Watanabe, T., Noguchi, Y., Nguyen, T. V. A., Yasuhira, M., Ikeda, S. & Endoh, T., 2022 2月 1, In: IEEE Transactions on Magnetics. 58, 2

  研究成果: Article › 査読

  • Tunnel Junction 100%
  • Magnetic Fields 22%
  • Magnetic Field 22%
  • Tunneling Magnetoresistance 9%
  • Temperature 9%
  1 被引用数 (Scopus)
• 2021

  40 nm 1T-1MTJ 128 Mb STT-MRAM with Novel Averaged Reference Voltage Generator Based on Detailed Analysis of Scaled-Down Memory Cell Array Design

  Koike, H., Tanigawa, T., Watanabe, T., Nasuno, T., Noguchi, Y., Yasuhira, M., Yoshiduka, T., Ma, Y., Honjo, H., Nishioka, K., Miura, S., Inoue, H., Ikeda, S. & Endoh, T., 2021 3月, In: IEEE Transactions on Magnetics. 57, 3, 9260242.

  研究成果: Article › 査読

  • Generators 100%
  • Technology 75%
  • Cell Array 50%
  • Networks (Circuits) 50%
  • Bit Rate 50%
  3 被引用数 (Scopus)

• Antiferromagnetic interlayer exchange coupling and large spin Hall effect in multilayer systems with Pt/Ir/Pt and Pt/Ir layers

  Saito, Y., Tezuka, N., Ikeda, S. & Endoh, T., 2021 8月 1, In: Physical Review B. 104, 6, 064439.

  研究成果: Article › 査読

  • Multilayers 100%
  • Antiferromagnetic 58%
  • Interlayer 33%
  • Large Spin 33%
  • Exchange Coupling 33%
  4 被引用数 (Scopus)

• Dual-Port SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under Field-Assistance-Free Condition

  Natsui, M., Tamakoshi, A., Honjo, H., Watanabe, T., Nasuno, T., Zhang, C., Tanigawa, T., Inoue, H., Niwa, M., Yoshiduka, T., Noguchi, Y., Yasuhira, M., Ma, Y., Shen, H., Fukami, S., Sato, H., Ikeda, S., Ohno, H., Endoh, T. & Hanyu, T., 2021 4月, In: IEEE Journal of Solid-State Circuits. 56, 4, p. 1116-1128 13 p., 9288784.

  研究成果: Article › 査読

  • Torque 100%
  • Memory 87%
  • Orbits 62%
  • Orbit 62%
  • Devices 62%
  10 被引用数 (Scopus)

• Effect of surface modification treatment on top-pinned MTJ with perpendicular easy axis

  Honjo, H., Naganuma, H., Nguyen, T. V. A., Inoue, H., Yasuhira, M., Ikeda, S. & Endoh, T., 2021 2月 1, In: AIP Advances. 11, 2, 025211.

  研究成果: Article › 査読

  Open Access

  • Surface Modification 100%
  • Multilayers 60%
  • Tunnel Junction 60%
  • Perpendicular Magnetic Anisotropy 50%
  • Tunneling Magnetoresistance 40%
  2 被引用数 (Scopus)

• Enhancement of magnetic coupling and magnetic anisotropy in MTJs with multiple CoFeB/MgO interfaces for high thermal stability

  Nishioka, K., Honjo, H., Naganuma, H., Nguyen, T. V. A., Yasuhira, M., Ikeda, S. & Endoh, T., 2021 2月 1, In: AIP Advances. 11, 2, 025231.

  研究成果: Article › 査読

  Open Access

  • Magnesium Oxide 100%
  • Tunneling 66%
  • Free Layer 25%
  • Magnetic Couplings 25%
  • Thermal Stability 16%
  4 被引用数 (Scopus)

• First Demonstration of 25-nm Quad Interface p-MTJ Device with Low Resistance-Area Product MgO and Ten Years Retention for High Reliable STT-MRAM

  Nishioka, K., Miura, S., Honjo, H., Inoue, H., Watanabe, T., Nasuno, T., Naganuma, H., Nguyen, T. V. A., Noguchi, Y., Yasuhira, M., Ikeda, S. & Endoh, T., 2021 6月, In: IEEE Transactions on Electron Devices. 68, 6, p. 2680-2685 6 p., 9422110.

  研究成果: Article › 査読

  • Magnesium Oxide 100%
  • Area 50%
  • Low Resistance 37%
  • Ten Year 25%
  • Vapor Phase Deposition 25%
  3 被引用数 (Scopus)

• Highly accurate and efficient cluster validation index engine using global separation and local dispersion architecture for adaptive image clustering systems

  Shen, H., Ma, Y. & Endoh, T., 2021 5月, In: Japanese journal of applied physics. 60, SB, SBBL02.

  研究成果: Article › 査読

  • Dispersion 100%
  • Cluster Validity 71%
  • Calculation 71%
  • Engine 57%
  • Images 42%

• Oxidation of Silicon Nanopillars

  Ye, S., Yamabe, K. & Endoh, T., 2021 4月 29, In: Journal of Physical Chemistry C. 125, 16, p. 8853-8861 9 p.

  研究成果: Article › 査読

  • Nanopillar 100%
  • Oxidation Reaction 56%
  • Oxidation 56%
  • Oxide 12%
  • Nanowire 12%
  2 被引用数 (Scopus)

• Precise fabrication of uniform sub-10-nm-diameter cylindrical silicon nanopillars via oxidation control

  Ye, S., Yamabe, K. & Endoh, T., 2021 6月, In: Scripta Materialia. 198, 113818.

  研究成果: Article › 査読

  Open Access

  • Oxidation 100%
  • Oxidation Reaction 100%
  • Silicon 71%
  • Nanopillar 57%
  • Diameters 42%
  6 被引用数 (Scopus)

• State-of-the-Art Power Devices and Power Electronics Integration Technology

  Takahashi, Y. & Endoh, T., 2021 5月 1, In: Journal of Japan Institute of Electronics Packaging. 24, 3, p. 215-225 11 p.

  研究成果: Article › 査読

• Structural Analysis of CoFeB/MgO-Based Perpendicular MTJs with Junction Size of 20 nm by STEM Tomography

  Niwa, M., Kimura, K., Naijo, T., Oshurahunov, A., Nagamachi, S., Inoue, H., Honjo, H., Ikeda, S. & Endoh, T., 2021 2月, In: IEEE Transactions on Magnetics. 57, 2, 9138472.

  研究成果: Article › 査読

  • Magnesium Oxide 100%
  • Transmissions 27%
  • Tomography 16%
  • Particle Size 16%
  • Surface Properties 11%

• Synthetic antiferromagnetic layer based on Pt/Ru/Pt spacer layer with 1.05 nm interlayer exchange oscillation period for spin-orbit torque devices

  Saito, Y., Ikeda, S. & Endoh, T., 2021 10月 4, In: Applied Physics Letters. 119, 14, 142401.

  研究成果: Article › 査読

  Open Access

  • Antiferromagnetic 100%
  • Multilayers 85%
  • Oscillation 71%
  • Electron Spin 57%
  • Interlayer 57%
  4 被引用数 (Scopus)

• Ultimate vertical gate-all-around metal–oxide–semiconductor field-effect transistor and its three-dimensional integrated circuits

  Ye, S., Yamabe, K. & Endoh, T., 2021 11月 1, In: Materials Science in Semiconductor Processing. 134, 106046.

  研究成果: Article › 査読

  Open Access

  • Field-Effect Transistor 100%
  • Integrated Circuit 33%
  • Devices 33%
  • Three Dimensional Integrated Circuits 22%
  • Integration 22%
  8 被引用数 (Scopus)

• W thickness dependence of spin Hall effect for (W/Hf)-multilayer electrode/CoFeB/MgO systems with flat and highly (100) oriented MgO layer

  Saito, Y., Tezuka, N., Ikeda, S. & Endoh, T., 2021 2月 1, In: AIP Advances. 11, 2, 025007.

  研究成果: Article › 査読

  Open Access

  • Multilayers 100%
  • Magnesium Oxide 71%
  • Electron Spin 38%
  • Spin 38%
  • Hall Effect 14%
  1 被引用数 (Scopus)
• 2020

  A free-extendible and ultralow-power nonvolatile multi-core associative coprocessor based on MRAM with inter-core pipeline scheme for large-scale full-adaptive nearest pattern searching

  Ma, Y., Miura, S., Honjo, H., Ikeda, S. & Endoh, T., 2020 4月 1, In: Japanese journal of applied physics. 59, SG, SGGB18.

  研究成果: Article › 査読

  • Core 100%
  • Cores 100%
  • Searching 60%
  • High Speed 40%
  • Microprocessor 40%
  1 被引用数 (Scopus)

• A Systematic Study of Tiny YOLO3 Inference: Toward Compact Brainware Processor with Less Memory and Logic Gate

  Li, T., Ma, Y. & Endoh, T., 2020, In: IEEE Access. 8, p. 142931-142955 25 p., 9154668.

  研究成果: Article › 査読

  Open Access

  • Algorithm 100%
  • Algorithms 100%
  • Object Detection 83%
  • Detector 66%
  • And Logic Gate 50%
  9 被引用数 (Scopus)

• FPGA Implementation of Real-Time Pedestrian Detection Using Normalization-Based Validation of Adaptive Features Clustering

  Li, T., Ma, Y., Shen, H. & Endoh, T., 2020 9月, In: IEEE Transactions on Vehicular Technology. 69, 9, p. 9330-9341 12 p., 9018153.

  研究成果: Article › 査読

  • Detection 100%
  • Time 100%
  • Histogram 80%
  • Field Programmable Gate Arrays 60%
  • Detection System 60%
  8 被引用数 (Scopus)

• Influence of Hard Mask Materials on the Magnetic Properties of Perpendicular MTJs with Double CoFeB/MgO Interface

  Honjo, H., Niwa, M., Nishioka, K., Nguyen, T. V. A., Naganuma, H., Endo, Y., Yasuhira, M., Ikeda, S. & Endoh, T., 2020 8月, In: IEEE Transactions on Magnetics. 56, 8, 9123981.

  研究成果: Article › 査読

  • Mask 100%
  • Tunneling Magnetoresistance 100%
  • Magnesium Oxide 80%
  • Magnetism 50%
  • Diffusion 40%
  4 被引用数 (Scopus)

• Large spin Hall effect and increase in perpendicular magnetic anisotropy in artificially synthesized amorphous W/Hf multilayer/CoFeB system

  Saito, Y., Tezuka, N., Ikeda, S. & Endoh, T., 2020 3月 30, In: Applied Physics Letters. 116, 13, 132401.

  研究成果: Article › 査読

  • Multilayers 100%
  • Magnesium Oxide 75%
  • Electron Spin 25%
  • Hall Effect 25%
  • Photoelectric Emission 25%
  7 被引用数 (Scopus)

• Low-density oxide grown thermally on sidewall of Si nanopillars

  Ye, S., Yamabe, K. & Endoh, T., 2020 1月 1, In: Materials Letters. 258, 126780.

  研究成果: Article › 査読

  • Nanopillar 100%
  • Oxide 33%
  • Low Density 33%
  • Oxidation Reaction 25%
  • Side Wall 25%
  5 被引用数 (Scopus)

• Magnetic properties of Co film in Pt/Co/Cr₂O₃/Pt structure

  Nguyen, T. V. A., Shiratsuchi, Y., Sato, H., Ikeda, S., Endoh, T. & Endo, Y., 2020 1月 1, In: AIP Advances. 10, 1, 015152.

  研究成果: Article › 査読

  Open Access

  • Magnetic Property 100%
  • Liquid Film 100%
  • Magnetoelectric Effect 100%
  • Structure 100%
  • Magnetic Properties 100%
  5 被引用数 (Scopus)

• Micromagnetic simulation of the temperature dependence of the switching energy barrier using string method assuming sidewall damages in perpendicular magnetized magnetic tunnel junctions

  Naganuma, H., Sato, H., Ikeda, S. & Endoh, T., 2020 7月 1, In: AIP Advances. 10, 7, 075106.

  研究成果: Article › 査読

  Open Access

  • Side Wall 100%
  • Magnetic Tunnel Junction 75%
  • Energy Barrier 50%
  • Spin Transfer 50%
  • Magnetoresistive Random-Access Memory 50%
  5 被引用数 (Scopus)

• Normalization-based validity index of adaptive K-means clustering for multi-solution application

  Li, T., Ma, Y. & Endoh, T., 2020, In: IEEE Access. 8, p. 9403-9419 17 p., 8952702.

  研究成果: Article › 査読

  Open Access

  • Validity 100%
  • Normalization 62%
  • Applications 37%
  • Evaluation 37%
  • Utilization 37%
  8 被引用数 (Scopus)

• Novel Quad-Interface MTJ Technology and its First Demonstration with High Thermal Stability Factor and Switching Efficiency for STT-MRAM beyond 2X nm

  Nishioka, K., Sato, H., Endoh, T., Honjo, H., Ikeda, S., Watanabe, T., Miura, S., Inoue, H., Tanigawa, T., Noguchi, Y. & Yasuhira, M., 2020 3月, In: IEEE Transactions on Electron Devices. 67, 3, p. 995-1000 6 p., 8995801.

  研究成果: Article › 査読

  • Magnesium Oxide 100%
  • Magnetic Tunnel Junction 58%
  • Engineering Process 50%
  • Technology 50%
  • IC0 25%
  12 被引用数 (Scopus)

• Oxidation-enhanced Si self-diffusion in isotopically modulated silicon nanopillars

  Kiga, R., Hayashi, S., Miyamoto, S., Shimizu, Y., Nagai, Y., Endoh, T. & Itoh, K. M., 2020 1月 31, In: Journal of Applied Physics. 127, 4, 045704.

  研究成果: Article › 査読

  • Alpha Oxidation 100%
  • Oxidation Reaction 70%
  • Nanopillar 60%
  • Silicon 60%
  • Self-Diffusion 30%
  4 被引用数 (Scopus)

• Scalability of Quad Interface p-MTJ for 1X nm STT-MRAM with 10-ns Low Power Write Operation, 10 Years Retention and Endurance > 10¹¹

  Miura, S., Nishioka, K., Naganuma, H., Nguyen, T. V. A., Honjo, H., Ikeda, S., Watanabe, T., Inoue, H., Niwa, M., Tanigawa, T., Noguchi, Y., Yoshizuka, T., Yasuhira, M. & Endoh, T., 2020 12月, In: IEEE Transactions on Electron Devices. 67, 12, p. 5368-5373 6 p., 9212560.

  研究成果: Article › 査読

  • Magnetic Tunnel Junction 100%
  • Chlormethine 75%
  • Velocity 37%
  • Scalability 37%
  • Efficiency 25%
  11 被引用数 (Scopus)
• 2019

  A 47.14-μW 200-MHz MOS/MTJ-Hybrid Nonvolatile Microcontroller Unit Embedding STT-MRAM and FPGA for IoT Applications

  Natsui, M., Suzuki, D., Tamakoshi, A., Watanabe, T., Honjo, H., Koike, H., Nasuno, T., Ma, Y., Tanigawa, T., Noguchi, Y., Yasuhira, M., Sato, H., Ikeda, S., Ohno, H., Endoh, T. & Hanyu, T., 2019, In: IEEE Journal of Solid-State Circuits. 54, 11, p. 2991-3004 14 p., 8796413.

  研究成果: Article › 査読

  • Sensor Node 100%
  • IoT 100%
  • Application 80%
  • Performance 80%
  • Utilization 80%
  30 被引用数 (Scopus)

• Change in chemical bonding state by thermal treatment in MgO-based magnetic tunnel junction observed by angle-resolved hard X-ray photoelectron spectroscopy

  Niwa, M., Yasui, A., Ikenaga, E., Honjo, H., Ikeda, S., Nakamura, T. & Endoh, T., 2019 5月 28, In: Journal of Applied Physics. 125, 20, 203903.

  研究成果: Article › 査読

  • Magnesium Oxide 100%
  • Tunnel Junction 57%
  • Chemical Bonding 28%
  • Heat Treatment 28%
  • State 28%
  2 被引用数 (Scopus)

• Critical Role of W Insertion Layer Sputtering Condition for Reference Layer on Magnetic and Transport Properties of Perpendicular-Anisotropy Magnetic Tunnel Junction

  Honjo, H., Ikeda, S., Sato, H., Yasuhira, M. & Endoh, T., 2019 7月, In: IEEE Transactions on Magnetics. 55, 7, 8676124.

  研究成果: Article › 査読

  • Tunneling Magnetoresistance 100%
  • Multilayers 66%
  • Ratios 50%
  • References 33%
  • Tunnel Junction 25%
  1 被引用数 (Scopus)

• Edge effect in the oxidation of three-dimensional nano-structured silicon

  Ye, S. & Endoh, T., 2019 4月, In: Materials Science in Semiconductor Processing. 93, p. 266-273 8 p.

  研究成果: Article › 査読

  • Oxidation 100%
  • Oxidation Reaction 100%
  • Edge Effect 80%
  • Planar Surface 60%
  • Nanomaterial 40%
  9 被引用数 (Scopus)

• Effect of capping layer material on thermal tolerance of magnetic tunnel junctions with MgO/CoFeB-based free layer/MgO/capping layers

  Honjo, H., Nguyen, T. V. A., Yasuhira, M., Niwa, M., Ikeda, S., Sato, H. & Endoh, T., 2019 12月 1, In: AIP Advances. 9, 12, 125330.

  研究成果: Article › 査読

  Open Access

  • Magnesium Oxide 100%
  • Capping Phenomenon 90%
  • Capping Layer 90%
  • Magnetism 80%
  • Magnetic Tunnel Junction 40%
  2 被引用数 (Scopus)

• Effect of surface modification treatment of buffer layer on thermal tolerance of synthetic ferrimagnetic reference layer in perpendicular-anisotropy magnetic tunnel junctions

  Honjo, H., Ikeda, S., Sato, H., Yasuhira, M. & Endoh, T., 2019 9月 21, In: Journal of Applied Physics. 126, 11, 113902.

  研究成果: Article › 査読

  Open Access

  • Multilayers 100%
  • Surface Property 53%
  • Buffer Layer 46%
  • Surface Modification 46%
  • Anisotropy 33%
  6 被引用数 (Scopus)

• First-principles study of pressure and SiO-incorporation effect on dynamical properties of silicon oxide

  Kageshima, H., Yajima, Y., Shiraishi, K. & Endoh, T., 2019, In: Japanese journal of applied physics. 58, 11, 111004.

  研究成果: Article › 査読

  • Silicon Dioxide 100%
  • Temperature 57%
  • Pressure 42%
  • Oxide 42%
  • Oxides 42%
  2 被引用数 (Scopus)

• Increase in spin-Hall effect and influence of anomalous Nernst effect on spin-Hall magnetoresistance in β-phase and α-phase W_100-xTa_x/CoFeB systems

  Saito, Y., Tezuka, N., Ikeda, S., Sato, H. & Endoh, T., 2019 5月 1, In: Applied Physics Express. 12, 5, 053008.

  研究成果: Article › 査読

  • Tantalum Alloys 100%
  • Electron Spin 88%
  • Spin 88%
  • Magnetoresistance 55%
  • Magnesium Oxide 33%
  7 被引用数 (Scopus)

• Insertion Layer Thickness Dependence of Magnetic and Electrical Properties for Double-CoFeB/MgO-Interface Magnetic Tunnel Junctions

  Miura, S., Nguyen, T. V. A., Endoh, Y., Sato, H., Ikeda, S., Nishioka, K., Honjo, H. & Endoh, T., 2019 7月, In: IEEE Transactions on Magnetics. 55, 7, 8674769.

  研究成果: Article › 査読

  • Magnesium Oxide 100%
  • Magnetic Tunnel Junction 66%
  • IC0 66%
  • Layer Thickness 33%
  • Damping 33%
  9 被引用数 (Scopus)

• Oxidation-induced stress in Si nanopillars

  Ye, S., Yamabe, K. & Endoh, T., 2019 8月 30, In: Journal of Materials Science. 54, 16, p. 11117-11126 10 p.

  研究成果: Article › 査読

  • Oxidation 100%
  • Oxidation Reaction 100%
  • Oxide 33%
  • Chemical Bond 33%
  • Particle Size 33%
  5 被引用数 (Scopus)

• Spin Hall effect investigated by spin Hall magnetoresistance in Pt_100-xAu_x/CoFeB systems

  Saito, Y., Tezuka, N., Ikeda, S., Sato, H. & Endoh, T., 2019 12月 1, In: AIP Advances. 9, 12, Y.

  研究成果: Article › 査読

  Open Access

  • Electron Spin 100%
  • Acceleration 100%
  • Spin 100%
  • Gold Alloys 100%
  • Spin Diffusion 44%
  5 被引用数 (Scopus)

• Variance Reduction during the Fabrication of Sub-20 nm Si Cylindrical Nanopillars for Vertical Gate-All-Around Metal-Oxide-Semiconductor Field-Effect Transistors

  Ye, S., Yamabe, K. & Endoh, T., 2019 12月 17, In: ACS Omega. 4, 25, p. 21115-21121 7 p.

  研究成果: Article › 査読

  Open Access

  • Diameters 100%
  • Metal-Oxide-Semiconductor Field-Effect Transistor 80%
  • Oxidation Reaction 80%
  • Region 40%
  • Arrays 40%
  6 被引用数 (Scopus)
• 2018

  Cross-point-type spin-transfer-torque magnetoresistive random access memory cell with multi-pillar vertical body channel MOSFET

  Sasaki, T. & Endoh, T., 2018 4月, In: Japanese journal of applied physics. 57, 4, 04FN09.

  研究成果: Article › 査読

  • Field Effect Transistor 100%
  • Cell 75%
  • Spin Transfer 62%
  • Magnetoresistive Random-Access Memory 62%
  • Torque 62%

• Drain current enhancement induced by hole injection from gate of 600-V-class normally off gate injection transistor under high temperature conditions up to 200°C

  Ishii, H., Ueno, H., Ueda, T. & Endoh, T., 2018 6月, In: Japanese journal of applied physics. 57, 6, 06KC03.

  研究成果: Article › 査読

  • Transistor 100%
  • Injection 33%
  • Drain Current 16%
  • Characteristics 12%
  • Classes 12%