ZnO/GaN heteroepitaxy

K. W. Jang, D. C. Oh, T. Minegishi, H. Suzuki, T. Hanada, H. Makino, M. W. Cho, T. Yao, S. K. Hong

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

This paper presents the recent achievements of ZnO/GaN heteroepitaxy. The general controlling method and mechanism for the polarity of heteroepitaxial ZnO and GaN films by interface engineering via Plasma-assisted Molecular beam epitaxy(P-MBE) are introduced in a viewpoint of principle for polarity control. We propose the principle of crystal polarity: Crystal polarity can succeed at the heterointerface when no interface layer is formed, while an interface layer with inversion symmetry is formed, the crystal polarity is inverted at the heterointerfae. The effects of polarity on the interface, surface and bulk structure, and the structural and optical properties of ZnO/GaN epitaxy are also included. The polarity of GaN on ZnO is successfully controlled based on the proposed principle for control of crystal polarity. Additionally, the electronic characteristics such as electron concentration, band-line-up, and C-V characteristics of ZnO/GaN heterointerface are dicussed.

Original languageEnglish
Article numberB10.3
Pages (from-to)491-502
Number of pages12
JournalMaterials Research Society Symposium Proceedings
Volume829
Publication statusPublished - 2005 Jun 20
EventProgress in Compound Semiconductor Materials IV - Electronic and Optoelectronic Applications - Boston, MA, United States
Duration: 2004 Nov 292004 Dec 3

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Jang, K. W., Oh, D. C., Minegishi, T., Suzuki, H., Hanada, T., Makino, H., Cho, M. W., Yao, T., & Hong, S. K. (2005). ZnO/GaN heteroepitaxy. Materials Research Society Symposium Proceedings, 829, 491-502. [B10.3].