ZnO thin films for high frequency SAW devices

Hideharu Ieki, Michio Kadota

Research output: Contribution to journalConference article

26 Citations (Scopus)

Abstract

Sezawa wave on ZnO/sapphire substrate is applied to low insertion loss surface acoustic wave (SAW) filters in microwave band of 1.5 GHz to 2.5 GHz range. RF planar magnetron sputtering (RF-Mg) system is used for the fabrication of epitaxial ZnO film. Sputtering conditions and the dopant are decided to realize stable and reproducible process. Details of ZnO epitaxial growth and practical application results are reviewed. To improve the piezoelectric properties of ZnO film, electron cyclotron resonance (ECR) sputtering method is investigated. ZnO/quartz substrate has small temperature coefficient of frequency (TCF) and medium electromechanical coupling coefficient (ks) comparable to ST cut quartz and Li2B4O7 respectively. Theoretical and experimental results are also discussed.

Original languageEnglish
Pages (from-to)281-289
Number of pages9
JournalProceedings of the IEEE Ultrasonics Symposium
Volume1
DOIs
Publication statusPublished - 1999
Event1999 IEEE Ultrasonics Symposium - Caesars Tahoe, NV, USA
Duration: 1999 Oct 171999 Oct 20

ASJC Scopus subject areas

  • Acoustics and Ultrasonics

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