ZnO growth on 3C-SiC

Tsutomu Minegishi; Yuzuru Narita; Shizuka Tokairin; Gakuyo Fujimoto; Hideyuki Suzuki; Zahra Vashaei; Kazushi Sumitani; Osami Sakata; Meongwhan Cho; Takafumi Yao; Maki Suemitsu

ZnO growth on 3C-SiC

Tsutomu Minegishi, Yuzuru Narita, Shizuka Tokairin, Gakuyo Fujimoto, Hideyuki Suzuki, Zahra Vashaei, Kazushi Sumitani, Osami Sakata, Meongwhan Cho, Takafumi Yao, Maki Suemitsu

Information Devices Division

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We studied ZnO growth on 3C-SiC(001)/Si(001) templates. In-situ reflection high- energy electron diffraction (RHEED) observations implied that ZnO grown on 3C-SiC(001) had a critical thickness (50 nm). From a structural characterization by using X-ray diffraction, we revealed that ZnO films thinner than the critical thickness grown on 3C-SiC(001) had a [10-11] orientation with 4-fold in-plane symmetry. On the other hand, ZnO films thicker than the critical thickness consisted of [10-11] and [0001] orientations. Also, the portion of [0001] oriented ZnO increased with the layer thickness. Possible interface configurations of ZnO(10-11)/3C-SiC(001) and ZnO(0001)/ZnO(10-11) are suggested.

Original language	English
Pages (from-to)	903-907
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	49
Issue number	3
Publication status	Published - 2006 Sep 1

Keywords

3C-SiC
MBE
XRD
ZnO

ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

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title = "ZnO growth on 3C-SiC",

abstract = "We studied ZnO growth on 3C-SiC(001)/Si(001) templates. In-situ reflection high- energy electron diffraction (RHEED) observations implied that ZnO grown on 3C-SiC(001) had a critical thickness (50 nm). From a structural characterization by using X-ray diffraction, we revealed that ZnO films thinner than the critical thickness grown on 3C-SiC(001) had a [10-11] orientation with 4-fold in-plane symmetry. On the other hand, ZnO films thicker than the critical thickness consisted of [10-11] and [0001] orientations. Also, the portion of [0001] oriented ZnO increased with the layer thickness. Possible interface configurations of ZnO(10-11)/3C-SiC(001) and ZnO(0001)/ZnO(10-11) are suggested.",

keywords = "3C-SiC, MBE, XRD, ZnO",

author = "Tsutomu Minegishi and Yuzuru Narita and Shizuka Tokairin and Gakuyo Fujimoto and Hideyuki Suzuki and Zahra Vashaei and Kazushi Sumitani and Osami Sakata and Meongwhan Cho and Takafumi Yao and Maki Suemitsu",

year = "2006",

month = sep,

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language = "English",

volume = "49",

pages = "903--907",

journal = "Journal of the Korean Physical Society",

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TY - JOUR

T1 - ZnO growth on 3C-SiC

AU - Minegishi, Tsutomu

AU - Narita, Yuzuru

AU - Tokairin, Shizuka

AU - Fujimoto, Gakuyo

AU - Suzuki, Hideyuki

AU - Vashaei, Zahra

AU - Sumitani, Kazushi

AU - Sakata, Osami

AU - Cho, Meongwhan

AU - Yao, Takafumi

AU - Suemitsu, Maki

PY - 2006/9/1

Y1 - 2006/9/1

N2 - We studied ZnO growth on 3C-SiC(001)/Si(001) templates. In-situ reflection high- energy electron diffraction (RHEED) observations implied that ZnO grown on 3C-SiC(001) had a critical thickness (50 nm). From a structural characterization by using X-ray diffraction, we revealed that ZnO films thinner than the critical thickness grown on 3C-SiC(001) had a [10-11] orientation with 4-fold in-plane symmetry. On the other hand, ZnO films thicker than the critical thickness consisted of [10-11] and [0001] orientations. Also, the portion of [0001] oriented ZnO increased with the layer thickness. Possible interface configurations of ZnO(10-11)/3C-SiC(001) and ZnO(0001)/ZnO(10-11) are suggested.

AB - We studied ZnO growth on 3C-SiC(001)/Si(001) templates. In-situ reflection high- energy electron diffraction (RHEED) observations implied that ZnO grown on 3C-SiC(001) had a critical thickness (50 nm). From a structural characterization by using X-ray diffraction, we revealed that ZnO films thinner than the critical thickness grown on 3C-SiC(001) had a [10-11] orientation with 4-fold in-plane symmetry. On the other hand, ZnO films thicker than the critical thickness consisted of [10-11] and [0001] orientations. Also, the portion of [0001] oriented ZnO increased with the layer thickness. Possible interface configurations of ZnO(10-11)/3C-SiC(001) and ZnO(0001)/ZnO(10-11) are suggested.

KW - 3C-SiC

KW - MBE

KW - XRD

KW - ZnO

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M3 - Article

AN - SCOPUS:33749863022

VL - 49

SP - 903

EP - 907

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - 3

ER -

ZnO growth on 3C-SiC

Abstract

Keywords

ASJC Scopus subject areas

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