ZnO growth on 3C-SiC

Tsutomu Minegishi, Yuzuru Narita, Shizuka Tokairin, Gakuyo Fujimoto, Hideyuki Suzuki, Zahra Vashaei, Kazushi Sumitani, Osami Sakata, Meongwhan Cho, Takafumi Yao, Maki Suemitsu

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


We studied ZnO growth on 3C-SiC(001)/Si(001) templates. In-situ reflection high- energy electron diffraction (RHEED) observations implied that ZnO grown on 3C-SiC(001) had a critical thickness (50 nm). From a structural characterization by using X-ray diffraction, we revealed that ZnO films thinner than the critical thickness grown on 3C-SiC(001) had a [10-11] orientation with 4-fold in-plane symmetry. On the other hand, ZnO films thicker than the critical thickness consisted of [10-11] and [0001] orientations. Also, the portion of [0001] oriented ZnO increased with the layer thickness. Possible interface configurations of ZnO(10-11)/3C-SiC(001) and ZnO(0001)/ZnO(10-11) are suggested.

Original languageEnglish
Pages (from-to)903-907
Number of pages5
JournalJournal of the Korean Physical Society
Issue number3
Publication statusPublished - 2006 Sep 1


  • 3C-SiC
  • MBE
  • XRD
  • ZnO

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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