We studied ZnO growth on 3C-SiC(001)/Si(001) templates. In-situ reflection high- energy electron diffraction (RHEED) observations implied that ZnO grown on 3C-SiC(001) had a critical thickness (50 nm). From a structural characterization by using X-ray diffraction, we revealed that ZnO films thinner than the critical thickness grown on 3C-SiC(001) had a [10-11] orientation with 4-fold in-plane symmetry. On the other hand, ZnO films thicker than the critical thickness consisted of [10-11] and  orientations. Also, the portion of  oriented ZnO increased with the layer thickness. Possible interface configurations of ZnO(10-11)/3C-SiC(001) and ZnO(0001)/ZnO(10-11) are suggested.
|Number of pages||5|
|Journal||Journal of the Korean Physical Society|
|Publication status||Published - 2006 Sep 1|
ASJC Scopus subject areas
- Physics and Astronomy(all)