Abstract
We studied ZnO growth on 3C-SiC(001)/Si(001) templates. In-situ reflection high- energy electron diffraction (RHEED) observations implied that ZnO grown on 3C-SiC(001) had a critical thickness (50 nm). From a structural characterization by using X-ray diffraction, we revealed that ZnO films thinner than the critical thickness grown on 3C-SiC(001) had a [10-11] orientation with 4-fold in-plane symmetry. On the other hand, ZnO films thicker than the critical thickness consisted of [10-11] and [0001] orientations. Also, the portion of [0001] oriented ZnO increased with the layer thickness. Possible interface configurations of ZnO(10-11)/3C-SiC(001) and ZnO(0001)/ZnO(10-11) are suggested.
Original language | English |
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Pages (from-to) | 903-907 |
Number of pages | 5 |
Journal | Journal of the Korean Physical Society |
Volume | 49 |
Issue number | 3 |
Publication status | Published - 2006 Sep 1 |
Keywords
- 3C-SiC
- MBE
- XRD
- ZnO
ASJC Scopus subject areas
- Physics and Astronomy(all)