ZnCdSe/ZnSe quantum-well laser diode on a (711)A GaAs substrate

Tetsuichiro Ohno, Yoshihiro Kawaguchi, Akira Ohki, Takashi Matsuoka

Research output: Contribution to journalArticle

Abstract

For the purpose of increasing the acceptor concentration in p-type ZnSe, nitrogen-doped ZnSe was grown on (n11) GaAs substrates. An acceptor concentration twice as large as that on a (100) substrate was obtained and found to be reproducible, except for (111) substrates, on which ZnSe films showed high resistivity. The PL characteristics of ZnCdSe/ZnSe single quantum wells (SQWs) on a (n11) substrate were also examined. The PL spectrum showed a blue shift mainly caused by the smaller Cd composition on a (n11) substrate than that on a (100) substrate. Finally, a ZnCdSe/ZnSe MQW SCH laser with HR-coated facets, a 900-µ m-long cavity, and a 20-µ m stripe contact was fabricated on a (711)A substrate. The built-in voltage of a LD on the (711)A substrate is 5 V lower than a LD on the (100) substrate. The former oscillated under pulsed operation at 25°C with a threshold current of 3.1 A and an oscillation wavelength of 501 nm.

Original languageEnglish
Pages (from-to)576-573
Number of pages4
JournalJapanese journal of applied physics
Volume33
Issue number10R
DOIs
Publication statusPublished - 1994 Oct
Externally publishedYes

Keywords

  • MBE
  • Nitrogen doping
  • P-type ZriSe
  • Tilted substrate
  • ZnCdSe/ZnSe quantum well

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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