Abstract
For the purpose of increasing the acceptor concentration in p-type ZnSe, nitrogen-doped ZnSe was grown on (n11) GaAs substrates. An acceptor concentration twice as large as that on a (100) substrate was obtained and found to be reproducible, except for (111) substrates, on which ZnSe films showed high resistivity. The PL characteristics of ZnCdSe/ZnSe single quantum wells (SQWs) on a (n11) substrate were also examined. The PL spectrum showed a blue shift mainly caused by the smaller Cd composition on a (n11) substrate than that on a (100) substrate. Finally, a ZnCdSe/ZnSe MQW SCH laser with HR-coated facets, a 900-µ m-long cavity, and a 20-µ m stripe contact was fabricated on a (711)A substrate. The built-in voltage of a LD on the (711)A substrate is 5 V lower than a LD on the (100) substrate. The former oscillated under pulsed operation at 25°C with a threshold current of 3.1 A and an oscillation wavelength of 501 nm.
| Original language | English |
|---|---|
| Pages (from-to) | 576-573 |
| Number of pages | 4 |
| Journal | Japanese journal of applied physics |
| Volume | 33 |
| Issue number | 10R |
| DOIs | |
| Publication status | Published - 1994 Oct |
| Externally published | Yes |
Keywords
- MBE
- Nitrogen doping
- P-type ZriSe
- Tilted substrate
- ZnCdSe/ZnSe quantum well
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)